Research Project
Grant-in-Aid for Scientific Research (C)
In order to reveal the mechanism of valence transition of YbInCu4 at ~40 K, we have investigated electronic structure of YbXCu4(X=Cd, Sn), where Cd and Sn are located just in both sides in the periodic table by means of hard x-ray photoemission spectroscopy (HAXPES) and compared the experimental results with those of YbInCu4. As the result, we obtained the results suggesting that the number of the conduction-band electrons at the Cu site is the greatest for YbInCu4. It is considered that electrons are easily transferred from the Cu to Yb sites, which would closely be related to the valence transition of YbInCu4. We noticed that the recently synthesized Kondo lattices YbNi3X9 (X=Al, Ga) are similar to the high- and low-temperature phases of YbInCu4 and carried out HAXPES for these compounds. From the comparison, we proposed the mechanism that the valence transition of YbInCu4 takes place due to the transfer of the conduction-band electrons to the Yb 4f orbitals.
All 2014 2013 2012 2011 Other
All Journal Article (13 results) (of which Peer Reviewed: 13 results) Presentation (64 results) (of which Invited: 1 results)
PHYSICAL REVIEW B
Volume: 89 Issue: 4 Pages: 45112-45112
10.1103/physrevb.89.045112
J. Phys. Soc. Conf. Proc
Volume: Vol.1
10.7566/jpscp.1.012117
J. Phys. Soc. Conf. Proc.
Volume: in press
Radiation Physics and Chemistry
Volume: 93 Pages: 14-20
10.1016/j.radphyschem.2013.01.033
Phys. Rev. B
Volume: 87 Issue: 20
10.1103/physrevb.87.205120
Volume: 86 Issue: 11 Pages: 1-5
10.1103/physrevb.86.115114
Volume: 86 Issue: 8 Pages: 85137-85137
10.1103/physrevb.86.085137
Journal of Electron Spectroscopy and Related Phenomena
Volume: 184 Issue: 3-6 Pages: 203-206
10.1016/j.elspec.2010.10.007
J. J. Appl. Phys
Volume: Vol.50 Issue: 5S2 Pages: 05FC10-05FC10
10.1143/jjap.50.05fc10
210000070537
Volume: 50 Issue: 5S2 Pages: 05FD03-05FD03
10.1143/jjap.50.05fd03
e-Journal of Surface Science and Nanotechnology
Volume: 9 Pages: 90-94
10.1380/ejssnt.2011.90
130004439263
Physical Review B
Volume: 84 Issue: 11
10.1103/physrevb.84.115143
Volume: (in press)