| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Research Abstract |
Radio frequency(RF) capacitively coupled discharge plasma is widely used for the preparation of functional thin films which play an important role for solar panel and liquid crystal display devices. However, the RF capacitively coupled plasma has a weak point that the productivity of the thin films is very low. Thus, high-density plasma source is required from the microelectronic industry. In this work, a novel plasma production method is proposed and is confirmed. The requirement is attained by the combination between ring-shaped hollow electrode and the coating of high secondary electron emission material to the electrode. In future, this proposal can be attained by developing the scale-up.
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