Growth of p-, n-amorphous oxides and application to devices
| Project/Area Number |
23550205
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | Shizuoka University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 非晶質 / ｐｎ制御 / 非晶質InGaZnO4 / p型 / 非晶質酸化物 / クラスタードーピング / ドーピング |
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| Research Abstract |
We have prepared p-type InGaZnO4 (IGZO) films by radio frequency (RF) magnetron sputtering of targets of mixtures of ZnO and AlN powders. In the cases of sputtering of a target (7% AlN) at high pressure of 0.02 Torr, films prepared at 0.5 and 0.6% O2 atmospheres show positive Seebeck coefficients of 1.5 and 1.2 mV/K (p-type), respectively. As O2-concentration is raised up to 1%, films become insulators again. All of films prepared from targets containing 10% AlN or more are insulators irrespective of O2-concentration in atmospheres. For a p-type IGZO films, we evaluate the resistivity of 210 ohmcm, the hole-density of 7.5x1017 cm-3 and mobility of 0.4 cm2/Vs. The rectification characteristic is seen in a current vs. voltage curve of a device comprising of Au/p-type IGZO/n-type IGZO. A possible mechanism of the growth of p-type IGZO films is that Al-N clusters with lower kinetic energy are incorporated into the disordered IGZO lattice, without the dissociation of Al-N bonds.
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Report
(4 results)
Research Products
(22 results)
