Development of solid-state lasers fabricated with laminated p- and n-type organic semiconductor crystals, and analysis of their emission mechanism
| Project/Area Number |
23550208
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
YAMAO Takeshi 京都工芸繊維大学, 工芸科学研究科, 准教授 (10397606)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Keywords | 高性能レーザー / 先端電子デバイス / 有機半導体 / 有機結晶 / 酸化物半導体 / 駆動方法 / 先端機能デバイス / 有機導体 |
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| Research Abstract |
In the present studies, development of a new observation system and improvement of device structures have been carried out for a future realization of the organic semiconductor devices that indicate current-injected laser oscillations. The constructed system enables elaborated measurements of time variations of both currents flowing in the device and light emissions from that device under application of alternating current voltages having frequencies over 100 kHz.
Organic light-emitting field-effect transistors were chosen for a target device. Bright light emissions or spectrally-narrowed emissions were achieved in the following devices: (i) Both p- and n-type organic materials were used for an emitting layer. (ii) Inorganic semiconductors were combined with organic crystals. (iii) Diffraction gratings were engraved on gate insulator layers. (iv) Dual gate electrodes were incorporated into the devices.
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Report
(4 results)
Research Products
(103 results)
