Organic lattice matching hetero epitaxy growth by strength oscillating monitoring of reflection high energy electron diffraction
| Project/Area Number |
23560001
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Hirosaki University |
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Principal Investigator |
ITAKA Kenji 弘前大学, 学内共同利用施設等, 准教授 (40422399)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
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| Keywords | 有機分子 / RHEED / エピタキシー / レーザー / MBE |
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| Research Abstract |
Since the organic semiconductors differ from the inorganic materials, the common sense in semiconductor engineering tends to be overlooked.
However, we have shown that it is settled under the category of semiconductor technology.
About a multichannel plate reflection high energy electron diffraction observation system, device structure was improved for improvement in layer bilayer film forming technology. Definitely, the image taking board was changed into 1024 gradation (old one is 256 gradation) about data incorporation of the high sensitivity screen which used the multichannel plate. Even in cases where a dynamic range spread and the strength of the peak of the substrate and the peak of thin film changed considerably with these, it could measure by the same adjustment in the quantity-of-light from the time of the deposition start.
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Report
(4 results)
Research Products
(7 results)
