Nanoscale control of physical properties of grapheen by site-selective epitaxy of graphene using substrate microfabrication

• Project/Area Number: 23560003
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: FUKIDOME Hirokazu 東北大学, 電気通信研究所, 准教授 (10342841)
• Co-Investigator(Kenkyū-buntansha): KAWAI Yusuke 東北大学, 大学院工学研究科, 助教 (20451536) ; KOTSUGI Masato 公益財団法人高輝度光科学研究センター, 利用研究促進部門, 研究員 (60397990) ; KOMEDA Tadahiro 東北大学, 多元物質科学研究所, 教授 (30312234)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2011: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
• Keywords: 界面 / グラフェン / SiC / 基板微細加工 / ナノスケール制御 / Si基板 / 微細加工

Outline of Final Research Achievements

Graphene is a promising next-generation device material. To realize graphene-based devices, it is significant to utilize unique characters of graphene physical properties. We have therefore performed a study on a nanoscale control of structural and electronic properties of graphene by using substrate microfabrication.
In this study, we formed graphene on SiC thin films on a microfabricated Si substrate. The interface structure of graphene thus formed depends on the microscopic crystallographic orientation of the substrate. As a result of this, we found that the stacking and therefore band structure of graphene is controlled by this method.

Research Products

• [Journal Article] Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication (2014)
  • Author(s): Hirokazu Fukidome, Takayuki Ide, Yusuke Kawai, Toshihiro Shinohara, Naoka Nagamura, Koji Horiba, Masato Kotsugi, Takuo Ohkochi, Toyohiko Kinoshita, Hiroshi Kumighashira, Masaharu Oshima, Maki Suemitsu
  • Journal Title: Scientific Reports Volume: 4 Issue: 1 Pages: 5173-5173
  • DOI: 10.1038/srep05173
  • Peer Reviewed / Open Access
• [Journal Article] Site selective epitaxy of graphene on Si wafers (2013)
  • Author(s): H. Fukidome, Y. Kawai, H. Handa, H. Hibino, H. Miyashita, M. Kotsugi, T. Ohkochi, M. Jung, T. Suemitsu, T. Kinoshita, T. Otsuji, and M. Suemitsu
  • Journal Title: Proceeding of the IEEE Volume: 101 Issue: 7 Pages: 1557-1566
  • DOI: 10.1109/jproc.2013.2259131
  • Peer Reviewed
• [Journal Article] Emergence of Pseudoelectromagnetic Field in Epitaxial Graphene on Microfabricated Substrate (2013)
  • Author(s): 吹留博一、小嗣真人、川合祐輔、井出隆之、大河内拓雄、木下豊彦、末光眞希
  • Journal Title: Hyomen Kagaku Volume: 34 Issue: 7 Pages: 380-384
  • DOI: 10.1380/jsssj.34.380
  • NAID: 10031184986
  • ISSN: 0388-5321, 1881-4743
  • Peer Reviewed
• [Journal Article] 基板微細加工の援用による超高品質グラフェンの作製 (2013)
  • Author(s): 吹留 博一
  • Journal Title: マテリアルステージ Volume: 13 Pages: 23-26
• [Journal Article] 基板相互作用を援用したグラフェンのナノ構造・物性制御 (2012)
  • Author(s): 吹留博一
  • Journal Title: 表面科学 Volume: 33 Issue: 10 Pages: 546-551
  • DOI: 10.1380/jsssj.33.546
  • NAID: 130004486704
  • Peer Reviewed
• [Journal Article] Precise control of epitaxy of graphene by microfabricating SiC substrate (2012)
  • Author(s): H. Fukidome、 Y. Kawai、 F. Fromm、 M. Kotsugi、 H. Handa、 T. Ide、 T. Ohkouchi、 H. Miyashita、 Y. Enta、 T. Kinoshita、 Th. Seyller、 M. Suemitsu
  • Journal Title: Applied Physics Letters Volume: 101 Issue: 4 Pages: 041605-041605
  • DOI: 10.1063/1.4740271
  • Peer Reviewed
• [Journal Article] 基板相互作用によるグラフェンの電子状態制御 (2012)
  • Author(s): 吹留 博一、川合祐輔
  • Journal Title: 信学技報 Volume: ED2012-2 Pages: 5-7
  • NAID: 110009564209
• [Journal Article] グラフェンを用いた半導体素子との開発と将来展望 (2012)
  • Author(s): 吹留 博一
  • Journal Title: 電子ジャーナル Volume: 438 Pages: 7-57
• [Journal Article] Epitaxy of graphene on 3C-SiC(111) thin films on microfabricated Si(111) substrates (2012)
  • Author(s): 吹留博一、川合祐輔、小嗣真人
  • Journal Title: Jpn. J. Appl. Phys. Volume: 51
  • NAID: 210000140718
  • Peer Reviewed
• [Presentation] 高輝度放射光を用いたオペランド顕微分光による材料とデバイスのギャップの橋渡し (2014)
  • Author(s): 吹留博一
  • Organizer: 表面科学会
  • Place of Presentation: 島根県松江市
  • Year and Date: 2014-11-08
  • Invited
• [Presentation] Nanoscale Operando observation of graphene transistor by using photoelectron emission microscopy (2014)
  • Author(s): H. Fukidome
  • Organizer: EMN SPring 2014
  • Place of Presentation: Las Vegas, USA
  • Invited
• [Presentation] Nanoscale Operando Analysis of graphene transistor by combination use of PEEM & 3D nano-ESCA (2014)
  • Author(s): H. Fukidome
  • Organizer: SPEM2014
  • Place of Presentation: Oxford, UK
  • Invited
• [Presentation] グラフェン・トランジスタの電子状態のオペランド光電子顕微鏡 観察 (2014)
  • Author(s): 吹留博一
  • Organizer: SPring-8 ワークショップ－SPring-8とユーザーのさらなる連携を目指して－
  • Place of Presentation: 兵庫県佐用郡佐用町
  • Invited
• [Presentation] Microscopic Control of structural and electronic properties of graphene by growing on SiC thin film on a microfabricated Si substrate (2013)
  • Author(s): H. Fukidome, T. Ide, Y. Kawai, M. Suemitsu, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima
  • Organizer: Graphene Week 2013
  • Place of Presentation: Chemniz, Germany
• [Presentation] Microscopic Control of Epitaxial Graphene on SiC(111) and SiC(100) Thin Films on a Microfabricated Si(100) Substrate (2013)
  • Author(s): H. Fukidome
  • Organizer: AVS2013
  • Place of Presentation: Long Beach, USA
• [Presentation] グラフェンデバイスのオペランド顕微分光 (2013)
  • Author(s): 吹留博一
  • Organizer: 物性研究所短期研究会 真空紫外・軟Ｘ線放射光物性研究の将来
  • Place of Presentation: 千葉県柏市
  • Invited
• [Presentation] 三次元nanoESCAによるグラフェン・デバイスのその場観察に向けて (2013)
  • Author(s): 吹留博一
  • Organizer: ISSP workshop
  • Place of Presentation: 柏市
  • Invited
• [Presentation] Epitaxy of Graphene on Si(100) and Si(111) Faces Simultaneously Formed on Si(100) Substrate (2013)
  • Author(s): Hirokazu Fukidome
  • Organizer: SSNS'13
  • Place of Presentation: 蔵王
• [Presentation] Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications (2012)
  • Author(s): Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkouchi, Akitaka Yoshigoe, Yuden Teraoka, Yoshiharu Enta, Toyohiko Kinoshita, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu
  • Organizer: 2012 MRS Spring Meeting
  • Place of Presentation: (San Francisco, USA)
• [Presentation] Definite Observation of Interfacial Charge Transfer in Graphene Transistor by Using Soft X-ray 3D Scanning Photoelectron Microscopy (2012)
  • Author(s): H. Fukidome, N. Nagamura, K. Horiba, S. Toyoda, S. Kurosumi, T. Shinohara, T. Ide,M. Suemitsu, K. Nagashio, A. Toriumi, and M. Oshima
  • Organizer: SSDM (2012 International Conference on Solid State Devices and Materials)
  • Place of Presentation: 京都
• [Presentation] Modulation of Electronic and Vibrational Properties of Epitaxial Graphene by Spatially Confining Eptaxy (2012)
  • Author(s): H. Fukidome, Y. Kawai, F. Fromm, M. Kosugi, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, T. Seyller, M. Suemitsu
  • Organizer: VAS14(14th International Conference on Vibrations at Surfaces)
  • Place of Presentation: 神戸
• [Presentation] Operando Analysis of Graphene Transistor by Soft X-ray 3D Scanning Photoelectron Microscopy (2012)
  • Author(s): H. Fukidome, N. Nagamura, K. Horiba, S. Toyoda, S. Kurosumi, T. Shinohara, T. Ide,M. Suemitsu, K. Nagashio, A. Toriumi, and M. Oshima
  • Organizer: ISGD-3（3rd Internatinal Symposium on Graphene Devices
  • Place of Presentation: (Paris, France)
• [Presentation] 基板微細加工によるエピグラフェンの構造・電子状態の制御 (2012)
  • Author(s): 吹留 博一
  • Organizer: 第25回日本放射光学会年会
  • Place of Presentation: 佐賀県鳥栖市
• [Presentation] グラフェンデバイスの電子状態のナノ分析 (2012)
  • Author(s): 吹留 博一
  • Organizer: ISSP workshop
  • Place of Presentation: 東京都文京区
• [Presentation] エピグラフェンの表面界面構造解析（invited） (2012)
  • Author(s): 吹留 博一
  • Organizer: 平成23年度日本表面科学会東北・北海道支部学術講演会(招待講演)
  • Place of Presentation: 宮城県仙台市
• [Presentation] Tuning of Structural and Electronic properties of Epitaxial Graphene by Substrate Microfabrication (2011)
  • Author(s): 吹留 博一
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  • Place of Presentation: 愛知県名古屋市
• [Presentation] Tuning of Electronic Properties of Epitaxial Graphene on Microfabrication (2011)
  • Author(s): 吹留 博一
  • Organizer: 第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011)
  • Place of Presentation: 京都府京都市
• [Presentation] グラフェンの結晶評価技術 (invited) (2011)
  • Author(s): 吹留 博一
  • Organizer: 応用物理学会第49回応用物理学会スクール -グラフェンの基礎から応用まで(招待講演)
  • Place of Presentation: 山形県山形市
• [Presentation] Spatial Confinement of Epitaxy of Graphene on Microfabricated SiC to Suppress Thickness Variation
  • Author(s): H. Fukidome, T. Ide, H. Handa, Y.Kawai, F. Fromm, M. Kotsugi, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, M.Suemitsu
  • Organizer: AVS 59th International Symposium & Exhibition
  • Place of Presentation: （Tampa, USA）
• [Remarks] 東北大学研究者紹介
  • URL: http://db.tohoku.ac.jp/whois/detail/07d0b9809a3935bd641ebf3d9ef57148.html
• [Remarks] 東北大学電気通信研究所 末光・吹留研究室 研究紹介
  • URL: http://www.suemitsu.riec.tohoku.ac.jp/about/index.html
• [Remarks] 東北大学研究者紹介 吹留博一
  • URL: http://db.tohoku.ac.jp/whois/detail/07d0b9809a3935bd641ebf3d9ef57148.html