| Project/Area Number |
23560003
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
KAWAI Yusuke 東北大学, 大学院工学研究科, 助教 (20451536)
KOTSUGI Masato 公益財団法人高輝度光科学研究センター, 利用研究促進部門, 研究員 (60397990)
KOMEDA Tadahiro 東北大学, 多元物質科学研究所, 教授 (30312234)
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| Project Period (FY) |
2011-04-28 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 界面 / グラフェン / SiC / 基板微細加工 / ナノスケール制御 / Si基板 / 微細加工 |
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| Outline of Final Research Achievements |
Graphene is a promising next-generation device material. To realize graphene-based devices, it is significant to utilize unique characters of graphene physical properties. We have therefore performed a study on a nanoscale control of structural and electronic properties of graphene by using substrate microfabrication.
In this study, we formed graphene on SiC thin films on a microfabricated Si substrate. The interface structure of graphene thus formed depends on the microscopic crystallographic orientation of the substrate. As a result of this, we found that the stacking and therefore band structure of graphene is controlled by this method.
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