Improvement in a vacuum ultraviolet ellipsometer for measuring absolute complex dielectric constants of anisotropic III-V nitride semiconductors
| Project/Area Number |
23560006
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Fukui |
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Principal Investigator |
FUKUI Kazutoshi 福井大学, 工学(系)研究科(研究院), 教授 (80156752)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 異方性 / 窒化物半導体 / 放射光 / エリプソメータ / 真空紫外光 / III-V窒化物半導体 |
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| Research Abstract |
Semiconductor devices such as LED and photodiode are promising ones for not only visible but also ultraviolet region. However, investigations into the optical properties of these semiconductor materials require wide wavelength region including vacuum ultraviolet (VUV). Then, our final target is the permanent installation of a very unique VUV ellipsometer with the synchrotron radiation to measure absolute complex refractive indices of those semiconductor materials from visible to VUV, because synchrotron radiation is the ideal ultraviolet light source. Then, we have been constructing a synchrotron dedicated ellipsometer and over-all operation testing will be carried out at the next machine time.
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Report
(4 results)
Research Products
(13 results)
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[Presentation] AlGaN混晶薄膜の複素屈折率2011
Author(s)
久保友宏、岩井浩紀、中村康寛、山本晃司、福井一俊
Organizer
2011年度日本物理学会北陸支部定例学術講演会
Place of Presentation
福井大学文京キャンパス
Year and Date
2011-11-26
Related Report
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