| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Research Abstract |
The dopant deactivation is a critical issue during plasma processing for GaN-related devices. In this study, we have focused on the effect of the plasma emission as well as the charge-state of the defects responsible for the dopant deactivation. Electron-hole pair generation upon the above-gap light (UV light) absorption is essential to the migration, but not to the formation of the source defects. Rather low-temperature (below 200 C) annealing restores the deactivated Si-donors in n-GaN, while the restoring rate depends significantly on the charge state of the defects (the electron density around the deactivated donors).
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