studies of mid-infrared devices using new materials and structures
| Project/Area Number |
23560012
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Osaka Prefecture University |
|---|
Principal Investigator |
KAWAMURA Yuichi 大阪府立大学, 工学(系)研究科(研究院), 教授 (80275289)
|
|---|
| Project Period (FY) |
2011 – 2013
|
| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
|---|
| Keywords | 分子線結晶成長 / 化合物半導体 / 量子井戸 / 赤外デバイス / ＭＢＥ / アンチモン / 窒素 / 中赤外デバイス / 赤外光デバイス / 量子ナノ構造 / エピタキシー / InGaAsN / GaAsSb / InAsSbN |
|---|
| Research Abstract |
Dilute nitride semiconductors on InP for mid-infrared optical devices were studies. InAsSbN strained quantum well laser diodes were fbricataed and obtained laser operation at 2.36mm wavelength at 300K. InGaAsN/aAsSb MQW diodes were also fabricated. Light emission at 2.86mm was obtained at 300K.
|
Report
(4 results)
Research Products
(22 results)
