studies of mid-infrared devices using new materials and structures

• Project/Area Number: 23560012
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Osaka Prefecture University
• Principal Investigator: KAWAMURA Yuichi 大阪府立大学, 工学(系)研究科(研究院), 教授 (80275289)
• Project Period (FY): 2011 – 2013
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 分子線結晶成長 / 化合物半導体 / 量子井戸 / 赤外デバイス / ＭＢＥ / アンチモン / 窒素 / 中赤外デバイス / 赤外光デバイス / 量子ナノ構造 / エピタキシー / InGaAsN / GaAsSb / InAsSbN

Research Abstract

Dilute nitride semiconductors on InP for mid-infrared optical devices were studies. InAsSbN strained quantum well laser diodes were fbricataed and obtained laser operation at 2.36mm wavelength at 300K. InGaAsN/aAsSb MQW diodes were also fabricated. Light emission at 2.86mm was obtained at 300K.

Research Products

• [Journal Article] 2.86mm room-temperature light emission of InGaAsN.GaAsSb type II quantum well diodes grown on InP substrates (2014)
  • Author(s): Y. Kawamura and T. Shahasi
  • Journal Title: Jpn.J.Appl. Phys. Volume: 53 Pages: 28004-28004
  • Peer Reviewed
• [Journal Article] The growth of high quarity GaAsSb and Type II InGaAs/GaAsSb superlattice structure (2013)
  • Author(s): K. Miura, Y. Iguchi, M. Thubokura and Y. Kawamura
  • Journal Title: J. Appl. Phys. Volume: 113 Pages: 143506-143506
  • Peer Reviewed
• [Journal Article] Optical proreties of InAsSbN single quantum wells grown on InP substrates for 2mm vawelength Region (2013)
  • Author(s): T. Shono, S. Mizuta and Y. Kawamura
  • Journal Title: J. Crystal growth Volume: 378 Pages: 69-72
  • Peer Reviewed
• [Journal Article] Type II InAs/GaSb superlattice grown on InP substrate (2013)
  • Author(s): Miura, Y. Iguchi and Y. Kawamura
  • Journal Title: J. Crystal Growth Volume: 378 Pages: 121-124
  • Peer Reviewed
• [Journal Article] The growth of high quality GaAsSb and Type II InAs/GaSb SL (2013)
  • Author(s): K. Miura, Y. Iguchi, M. Tsubokura and Y. Kawamura
  • Journal Title: J. App. Phys. Volume: 113
  • Peer Reviewed
• [Journal Article] Type II InAs?GaSb superlattice grown on InP substrate (2013)
  • Author(s): K. Miura, Y. Iguchi and Y. Kawamura
  • Journal Title: J. Crystal Growth Volume: 378 Pages: 121-124
  • Peer Reviewed
• [Journal Article] Optical properties of InAsSbN SQW grown on InP substrate (2013)
  • Author(s): T. Shono, S. Mizuta and Y. Kawamura
  • Journal Title: J. Crystal Growth Volume: 378 Pages: 69-72
  • Peer Reviewed
• [Journal Article] Fabrication of InGaAsN/AlAsSb resonant tunneling diodes grown by molecular beam epitaxy (2012)
  • Author(s): Y. Kawamura and K. Mitsuyoshi
  • Journal Title: Electron. Lett. Volume: 48 Pages: 280-281
  • Peer Reviewed
• [Journal Article] fabrication of InGaAsN/AlAsSb resonant tunnelingdiodes on InP (2012)
  • Author(s): Y. Kawamura and K Mitsuyoshi
  • Journal Title: Electronics Letters Volume: 48 Issue: 5 Pages: 280-281
  • DOI: 10.1049/el.2012.0186
  • Peer Reviewed
• [Journal Article] Characterization of InGaAsSbN layers grown on InP by MBE (2011)
  • Author(s): M. Yoshikawa, K. Miura, Y. Iguchi and Y. Kawamura
  • Journal Title: Phys. Status Solidi Volume: C8 N0.2 Pages: 390-392
  • Peer Reviewed
• [Journal Article] Characterization of InGaAsSbN layers grown on InP (2011)
  • Author(s): M.Yoshikawa, K. Miura, Y. Iguchi and Y. Kawamura
  • Journal Title: Phys. Status Solidi C Volume: 8 Pages: 390-392
  • Peer Reviewed
• [Presentation] Mid-infrared photodetectors with InAs/GaSb typeII quantum wells grown on InP substrate (2013)
  • Author(s): H. Inada, K, Miura, Y. Iguchi , Y. Kawamura, H. Katayama, and M. Kimata
  • Organizer: Thhe 25^<th> International Conference on InP and related materials
  • Place of Presentation: Kobe, Japan
• [Presentation] Optical properties of InAsSbN single quantum wells grown on InP substrates for 2μm wavelength region (2012)
  • Author(s): T. Shono, M. Mizuta and Y. Kawamura
  • Organizer: The 17^<th> International Conference of Molecuar Beam Epitaxy TuA-2-4
  • Place of Presentation: Nara, Japan
• [Presentation] Optical properties of InAsSbN SQW grown on InP (2012)
  • Author(s): T. Shono, S. Mizuta, Y. Kawamura
  • Organizer: 17th Int. National. Conf. of MBE
  • Place of Presentation: Nara, Japan
• [Presentation] Type II InAs/GaSb superlattice grown on InP (2012)
  • Author(s): K. Miura, Y. Iguchi and Y. Kawamra
  • Organizer: 17th Int. National Conf. of MBE
  • Place of Presentation: Nara, Japan
• [Presentation] Type II InAs/GaSb superlattice grown on InP
  • Author(s): K. Miura, Y. Iguchi and Y. Kawamura
  • Organizer: The 17^<th> International Conference of Molecuar Beam Epitaxy ThA-2-3
• [Presentation] InP基板上のInGaAsN/GaAsSb Type II ﾀﾞｲｵｰﾄﾞのＥＬ特性
  • Author(s): 佐橋徹、河村裕一
  • Organizer: 応用物理学会学術講演会（2013秋）
  • Place of Presentation: 同志社大学
• [Presentation] InP基板上のInAsSbN単一量子井戸ﾀﾞｲｵｰﾄﾞのＥＬ特性
  • Author(s): 水田省吾、河村裕一
  • Organizer: 応用物理学会学術講演会（2014春）
  • Place of Presentation: 青山学院大学
• [Presentation] ＭＢＥ成長InGaAsN/AlAsSb共鳴トンネルダイオードの特性評価
  • Author(s): 光吉謙太、河村裕一
  • Organizer: 第７２回応用物理学会
  • Place of Presentation: 山形大学
• [Presentation] 歪補償InGaAs/GaAsSbタイプII多重量子井戸層の特性
  • Author(s): 平池龍馬、三浦広平、猪口康博、河村裕一
  • Organizer: 第７２回応用物理学会
  • Place of Presentation: 山形大学
• [Presentation] 歪補償InGaAs/GaAsSbタイプII多重量子井戸への成長シーケンスの影響
  • Author(s): 三浦広平、猪口康博、日比野暁、河村裕一
  • Organizer: 第５９回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] InP基板上InAsSbN単一量子井戸のＰＬ温度特性
  • Author(s): 水田省吾、正野琢也、河村裕一
  • Organizer: 第５９回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学