| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Research Abstract |
In this project, we studied vanadium dioxide (VO2) with insulator-metal transition (IMT) and related oxide phases which possess different oxidation states such as VnO2n-1 and VnO2n+1. By using mass flow controller which enabled fine control of oxygen partial pressure, we successfully fabricated crystalline V2O3 films on sapphire and silicon substrates. Obtained V2O3 films transformed to VnO2n-1 and VnO2n+1 phases by post-annealing in oxygen atmosphere with adequate temperature and time. Through the study, electrical transport characteristics of VnO2n-1 and VnO2n+1 were partially clarified and the significance of phase coexistence in vanadium oxide thin films was shown.
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