Study on crystalline growth of phase transition oxides with various oxidation states and their electric transport characteristics
| Project/Area Number |
23560013
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokai University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 相転移酸化物 / バナジウム酸化物 / 絶縁体金属転移 / マグネリ相 / 結晶成長 / 薄膜堆積 / 相共存 / アニール効果 / 酸化バナジウム薄膜 / 相転移 / 電気的特性 / 結晶変態 / 国際情報交流 / フランス / アメリカ |
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| Research Abstract |
In this project, we studied vanadium dioxide (VO2) with insulator-metal transition (IMT) and related oxide phases which possess different oxidation states such as VnO2n-1 and VnO2n+1. By using mass flow controller which enabled fine control of oxygen partial pressure, we successfully fabricated crystalline V2O3 films on sapphire and silicon substrates. Obtained V2O3 films transformed to VnO2n-1 and VnO2n+1 phases by post-annealing in oxygen atmosphere with adequate temperature and time. Through the study, electrical transport characteristics of VnO2n-1 and VnO2n+1 were partially clarified and the significance of phase coexistence in vanadium oxide thin films was shown.
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Report
(4 results)
Research Products
(55 results)
