Liquid phase growth of nitride semiconductors by using plasma mixture of nitrogen and hydrogen

• Project/Area Number: 23560014
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Shizuoka Institute of Science and Technology
• Principal Investigator: OZAWA Tesuo 静岡理工科大学, 理工学部, 教授 (90247578)
• Project Period (FY): 2011 – 2013
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 窒化物 / 液相成長 / プラズマ / バルク成長 / 混晶 / 半導体 / AlN / GaN / 溶液成長 / 結晶成長 / マイク波プラズマ / InGaN / 窒素プラズマ / 窒化物半導体 / 低温低圧成長

Research Abstract

GaN single crystals of wurtzite structure were grown on the AlN/Al2O3 substrate by reacting gallium metal with atomic nitrogen-hydrogen in a microwave plasma. AlN/Al2O3 substrates were prepared by nitriding (0001) sapphire substrates with atomic nitrogen in a microwave plasma. GaN layer of about 10 &#61549;m was grown on AlN/Al2O3 substrate with a growth rate of 2.5 &#61549;m/h. It was found that the layer was nearly oriented to (0001)GaN//(0001) sapphire by X-ray diffraction (XRD) measurement. PL spectrum showed a strong band edge emission at 3.3 eV at room temperature without a yellow emission due to deep level. A full-width at half-maximum was approximately 230 meV. These properties suggest high crystalline GaN was grown on the AlN/Al2O3 substrate by solution growth under nitrogen and hydrogen plasma mixture. InxGa1-xN(x<0.15)single crystals were also grown by our methods.

Research Products

• [Presentation] Al-doped ZnO electrode formation for dye sensitized solarcell by gas evaporation method (2013)
  • Author(s): Minoru Dohi, Ryo Koizumi, Tetsuo Ozawa
  • Organizer: 17th International Conferenceon Crystal Growth and Epitaxy
  • Place of Presentation: University of Warsaw Warsaw (Poland)
• [Presentation] AlN single crystal growth on sapphire substrate under atomic nitrogen plasma (2013)
  • Author(s): Tetsuo Ozawa, Kiyohiko Katsumata, Minoru Dohi, and Yasuhiro Hayakawa
  • Organizer: 17th International Conferenceon Crystal Growth and Epitaxy
  • Place of Presentation: University of Warsaw Warsaw (Poland)
• [Presentation] GaN single crystals by solution growth under atomic nitrogen and hydrogen plasma mixture (2011)
  • Author(s): T. Ozawa, N. Harada, M. Dohi, and Y. Hayakawa
  • Organizer: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  • Place of Presentation: Nagoya, Japan(P1-033B)