| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Research Abstract |
Semiconducting iron disilicide (beta-FeSi2) has been attracting a great deal of attention as a photo-detector and Si-based light emitter operating at wavelengths suitable for optical fiber communications. This is because beta-FeSi2 has a band gap less than 0.80 eV and a very large optical absorption coefficient over 1E+5 /cm at 1 eV. Moreover, this semiconducting material is composed of the elements that are naturally abundant and less toxic than the elements used in conventional compound semiconductors.
In this report, we report on the novel fabrication method of beta-FeSi2 photochemical diode with Au electrode on the surface of Si powder by using metal-organic chemical vapor deposition (MOCVD) method which is general in semiconductor process technology. Moreover, we repot on the hydrogen evolution over this photochemical diode under irradiation of not only UV but also visible light from formaldehyde aqueous solution.
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