| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Research Abstract |
Control of crystal orientation of polycrystalline thin films on glass substrates and doping properties of nitrogen acceptors have been investigated for zinc oxide films by ion-plating deposition with direct current arc discharge. In order to realize p-type doping, not only single doping but also co-doping with gallium was explored. Although we could not obtain p-type zinc oxides, we could find out characteristic change of electrical properties by the doping. We realized control of orientation using nanosheet seed layers as templates on glass substrates. Details about changes of microstructural properties like as grain size and degree of orientation caused by the nanosheet seed layer and the influences of the structural control on carrier transport properties have been clarified in detail.
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