Hybrid orientation structure formation by electron beam induced orientation selective epitaxial growth

• Project/Area Number: 23560028
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Iwaki Meisei University
• Principal Investigator: INOUE Tomoyasu いわき明星大学, 科学技術学部, 教授 (60193596)
• Project Period (FY): 2011 – 2013
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: 結晶成長 / 超薄膜 / 表面・界面物性 / 方位選択エピタキシ / 電子ビーム照射 / 表面界面物性 / 複合面方位

Research Abstract

We have studied orientation selective epitaxial (OSE) growth of cerium dioxide (CeO2) layers on Si(100) substrates, which is enabled by surface potential modification during the growth process. Adopting an electron beam irradiation method, we attained the successful results of the hybrid orientation structure of CeO2(100) and (110) areas on Si(100) substrates. There exists a transition region containing both orientation components between the two orientation areas and its width decreases proportionally as the logarithm of underlying Si substrate resistivity. With the aim of perfect isolation of the two orientation areas, we have started OSE growth experiments using silicon on insulator substrates with lithographically formed trenches.

Research Products

• [Journal Article] Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy (2014)
  • Author(s): T. Inoue and S. Shida
  • Journal Title: J. Vac. Sci. Technol. B Volume: 32 Issue: 3
  • DOI: 10.1116/1.4863301
  • Peer Reviewed
• [Journal Article] Hybrid Orientation Selective Orientation Epitaxial Growth of CeO_2(100) and (110) Regions on Si(100) Sub- strates (2013)
  • Author(s): T. Inoue and S. Shida
  • Journal Title: Proc. 12th International Symposi- um on Sputtering & Plasma Processes Pages: 87-90
• [Journal Article] Hybrid orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates (2013)
  • Author(s): T. Inoue and S. Shida
  • Journal Title: Proc. 12th International Symposium on Sputtering and Plasma Processes Volume: 12 Pages: 87-90
• [Journal Article] Spacially Varied Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Sub- strates by Reactive Magnetron Sputtering Utilizing Electron Beam Irradiation (2012)
  • Author(s): T. Inoue and S. Shida
  • Journal Title: Thin Solid Films Volume: 520 Pages: 6179-6182
  • Peer Reviewed
• [Journal Article] Hybrid Orientation Substrate Fabrication using Electron Beam induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Layers on Si(100) Substrates (2012)
  • Author(s): T. Inoue and S. Shida
  • Journal Title: Electrochemical Society Transaction Volume: 45 Pages: 443-451
  • Peer Reviewed
• [Journal Article] Spatially varied orientation selective epitaxial growth of Ce2(100) and (110) regions on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation (2012)
  • Author(s): Tomoyasu Inoue and Shigenari Shida
  • Journal Title: Thin Sokid Films Volume: 520 Pages: 6179-6182
  • Peer Reviewed
• [Journal Article] Hybrid Orientation Substrate Fabrication using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering (2011)
  • Author(s): T. Inoue and S. Shida
  • Journal Title: Proc. 4th Int. Conf. Advanced Plasma Technol. Pages: 168-170
• [Journal Article] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si(100) Substrates (2011)
  • Author(s): T. Inoue, N. Igarashi, Y. Kanno and S. Shida
  • Journal Title: Thin Solid Films Volume: 519 Pages: 5775-5779
• [Journal Article] Spatially Varied Orientation Selective Epi- taxial Growth of (100) and (110) CeO_2 Layers on Si(100) Substrates using Absorbed Elec- tron Imaging System (2011)
  • Author(s): T. Inoue, H. Ohtake, J. Otani and S. Shida
  • Journal Title: いわき明星大学科学技術学部研究紀要 Volume: 24 Pages: 1-8
• [Journal Article] Two dimensional control of electron beam induced orientation selective epitaxial growth of (100) and (110) CeO2 regions on Si(100) substrates (2011)
  • Author(s): Tomoyasu Inoue and Shigenari Shida
  • Journal Title: Thin Solid Films Volume: 519 Pages: 5775-5779
  • Peer Reviewed
• [Journal Article] Hybrid orientation substrate fabrication using electron beam induced orientation selective epitaxial growth of CeO2(100) and (110) areas on Si(100) substrates by reactive magnetron sputtering (2011)
  • Author(s): Tomoyasu Inoue and Shigenari Shida
  • Journal Title: Proceedings of 4th International Conference on Advanced Plasma Technologies Volume: - Pages: 168-170
  • Peer Reviewed
• [Presentation] Si(100)基板上の複合面方位CeO_2領域間の分離 (2014)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
  • Year and Date: 2014-03-20
• [Presentation] Si(100)基板上の複合面方位CeO2領域間の分離 (2014)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
• [Presentation] Hybrid Orientation Structure of CeO_2(100) and (110) Regions on Si(100) Substrates Formed by Orientation Selective Epitaxial Growth (2013)
  • Author(s): T. Inoue and S. Shida
  • Organizer: 15th Inter- national Conference on Solid Surfaces
  • Place of Presentation: Paris , France
  • Year and Date: 2013-09-11
• [Presentation] Hybrid Orientation Structure of CeO_2(100) and (110) Regions on Si(100) Substrates (2013)
  • Author(s): T. Inoue and S. Shida
  • Organizer: 12th International Symposium on Sputtering & Plasma Processes
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2013-07-10
• [Presentation] Si(100)基板上の複合面方位CeO_2層の形成 (2013)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-27
• [Presentation] Hybrid orientation structure of CeO2(100) and (110) regions on Si(100) substrates formed by orientation selective epitaxial growth (2013)
  • Author(s): T. Inoue and S. Shida
  • Organizer: 15th International Conference on Solid Surfaces
  • Place of Presentation: Paris, France
• [Presentation] Hybrid orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates (2013)
  • Author(s): T. Inoue and S. Shida
  • Organizer: 12th International Symposium on Sputtering and Plasma Processes
  • Place of Presentation: Kyoto, Japan
• [Presentation] Hybrid Orientation Substrate Fabrication using Electron Beam induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering (2013)
  • Author(s): T. Inoue and S. Shida
  • Organizer: 12th International Symposium on Sputtering and Plasma Processes
  • Place of Presentation: Palais des Congres de Paris
• [Presentation] Hybrid Orientation Substrate Fabrication using Electron Beam induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering (2013)
  • Author(s): T. Inoue and S. Shida
  • Organizer: 15th International Conference on Solid Surfaces
  • Place of Presentation: Kyoto Research Park
• [Presentation] Hybrid Orientation Structure Fabrication using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates (2012)
  • Author(s): T. Inoue and S. Shida
  • Organizer: Electrochemical Soci- ety 221st Meeting
  • Place of Presentation: Seattle, WA USA
  • Year and Date: 2012-05-08
• [Presentation] Si(100)基板上の複合面方位CeO_2層の形成―遷移領域幅の縮小― (2012)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] Si(100) 基板上の複合面方位CeO2 層の形成{基板比抵抗依存性{ (2012)
  • Author(s): 井上知泰, 信田重成
  • Organizer: 第59 回 応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] Hybrid Orientation Substrate Fabrication using Electron Beam induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Layers on Si(100) Substrates (2012)
  • Author(s): T. Inoue and S. Shida
  • Organizer: 221st Electrochemical Society Meeting
  • Place of Presentation: Washington State Convention Center (Seattle)
• [Presentation] Si(100)基板上の複合面方位CeO2層の形成 (2012)
  • Author(s): 井上知泰, 信田重成
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Si(100)基板上の複合面方位CeO2層の形成 -遷移領域幅の縮小 - (2012)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] Spacially Varied Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering Utilizing Electron Beam Irradiation (2011)
  • Author(s): T. Inoue and S. Shida
  • Organizer: American Vacuum Society 58th International Symposium
  • Place of Presentation: Nashville, TN USA
  • Year and Date: 2011-11-01
• [Presentation] Hybrid Orientation Structure Fabrication using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates Reactive Magnetron Sputtering (2011)
  • Author(s): T. Inoue and S. Shida
  • Organizer: 4th International Conference on Advanced Plasma Technologies
  • Place of Presentation: Strunjan, Slovenia
  • Year and Date: 2011-09-11
• [Presentation] Si(100)基板上の複合面有, 519, 2011, 5775-5779.方位CeO_2層の形成―遷移領域幅の縮小― (2011)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 2011-08-31
• [Presentation] Si(100)基板上の複合面方位CeO2層の形成 -遷移領域幅の縮小 - (2011)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第72回応用物理学学術講演会
  • Place of Presentation: 山形大学
• [Presentation] Hybrid orientation substrate fabrication using electron beam induced orientation selective epitaxial growth of CeO2(100) and (110) areas on Si(100) substrates by reactive magnetron sputtering (2011)
  • Author(s): Tomoyasu Inoue and Shigenari Shida
  • Organizer: 4th International Conference on Advanced Plasma Technologies
  • Place of Presentation: Strunjan, Slovenia
• [Presentation] Spatially varied orientation selective epitaxial growth of CeO2(100) and (110) areas on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation (2011)
  • Author(s): Tomoyasu Inoue and Shigenari Shida
  • Organizer: Ameriacn Vacuum Society 58th International Symposium
  • Place of Presentation: Nashville, TN, USA
• [Remarks]
  • URL: http://www.iwakimu.ac.jp/research/kaken
• [Remarks]
  • URL: http://www.iwakimu.ac.jp/information/disclosure/kaken.html