| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Outline of Final Research Achievements |
We employed hard x-ray photoelectron spectroscopy in operating devices. For a Pt gate metal/high-k gate stack structure, we have found that a potential gradient was formed at the Pt/HfO2 interface. Oxide layer formed at the Pt/HfO2 interface is the origin of the potential gradient
For the SiON/Si interface, the interface state density increased with the nitrogen concentration in the oxide, but the spectral shape was independent of the nitrogen concentration. NO species at the SiON/Si interface increase induced inhomogeneous interface sites. The number of inhomogeneous interface sites is proportional to the interface state density. For resistance switching memory, oxygen and Hf atoms in the Pt/HfO2/Pt structure migrate to the top electrode under bias, forming Pt-O bond and Hf-Pt bond at the Pt/HfO2 interface, which could induce resistance switching behavior in this system.
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