Electronic states and electric properties under device operation

• Project/Area Number: 23560033
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: YAMASHITA Yoshiyuki 独立行政法人物質・材料研究機構, ナノエレクトロニクス材料ユニット, MANA研究者 (00302638)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 光電子分光 / オペランド / その場観測 / 高誘電体 / 抵抗変化メモリ / ゲートスタック構造 / 界面準位 / ゲートスタック / 金属酸化物 / 電子分光 / シリコン / 高誘電体膜

Outline of Final Research Achievements

We employed hard x-ray photoelectron spectroscopy in operating devices. For a Pt gate metal/high-k gate stack structure, we have found that a potential gradient was formed at the Pt/HfO2 interface. Oxide layer formed at the Pt/HfO2 interface is the origin of the potential gradient
For the SiON/Si interface, the interface state density increased with the nitrogen concentration in the oxide, but the spectral shape was independent of the nitrogen concentration. NO species at the SiON/Si interface increase induced inhomogeneous interface sites. The number of inhomogeneous interface sites is proportional to the interface state density. For resistance switching memory, oxygen and Hf atoms in the Pt/HfO2/Pt structure migrate to the top electrode under bias, forming Pt-O bond and Hf-Pt bond at the Pt/HfO2 interface, which could induce resistance switching behavior in this system.

Research Products

• [Journal Article] Bias induced Cu ion migration behavior in resistive change memory structure observed by hard X-ray photoelectron spectroscopy (2015)
  • Author(s): Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, and Toyohiro Chikyow
  • Journal Title: Jpn. J. Appl. Phys. Volume: 54 Issue: 6S1 Pages: 06FG01-06FG01
  • DOI: 10.7567/jjap.54.06fg01
  • NAID: 210000145237
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by hard x-ray photoelectron spectroscopy under device operation (2014)
  • Author(s): Y. Yamashita, H. Yoshikawa, T. Chikyo, K. Kobayashi
  • Journal Title: J. Appl. Phys. Volume: 115 Issue: 4
  • DOI: 10.1063/1.4863637
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Hard x-ray photoelectron spectroscopy study of Ge2Sb2Te5; as-deposited amorphous crystalline and laser-reamorphized (2014)
  • Author(s): J. H. Richter, P. Fons, A. V. Kolobov, S. Ueda, H. Yoshikawa, Y. Yamashita, S.Ishimaru, K. Kobayashi, J. Tominaga
  • Journal Title: Appl. Phys. Lett. Volume: 104 Issue: 6
  • DOI: 10.1063/1.4865328
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Photoelectron spectroscopic study on band alignment of poly(3-hexylthiophene-25-diyl)/polar-ZnO heterointerface (2014)
  • Author(s): T.Nagata, O. Seungjun, Y. Yamashita, H. Yoshikawa, N. IKENO, K. Kobayashi,T. Chikyo, Y. Wakayama
  • Journal Title: Thin Solid Films Volume: 554 Pages: 194-198
  • DOI: 10.1016/j.tsf.2013.08.018
  • Peer Reviewed
• [Journal Article] Bias dependent potential distribution of a Pt/HfO2/SiO2/Si gate structure obtained from a bias application in hard X-ray photoelectron spectroscopy (2014)
  • Author(s): Y. Yamashita, H. Yoshikawa, T. Chikyo
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53 Issue: 5S1 Pages: 05FH05-05FH05
  • DOI: 10.7567/jjap.53.05fh05
  • NAID: 210000143843
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Bias-voltage application in a hard X-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces (2014)
  • Author(s): Y. Yamashita, T. Chikyo, K. Kobayashi
  • Journal Title: SPring-8 Research Frontiers Volume: 2013 Pages: 54-55
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Photoelectron Spectroscopic Study on High-k Dielectrics Based Nanoionics-Type ReRAM Structure under Bias Operation (2014)
  • Author(s): T. Nagata, Y. Yamashita, H. Yoshikawa, K. Kobayashi, T. Chikyo
  • Journal Title: ECS TRANSACTIONS Volume: 61 Pages: 301-310
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Chemical insight into electroforming of resistive switching manganite heterostructures (2013)
  • Author(s): Francesco Borgatti, Chanwoo Park, Anja Herpers, Francesco Offi, Ricardo Egoavil, Yoshiyuki Yamashita, Anli Yang,e Masaaki Kobata, Keisuke Kobayashi, Jo Verbeeck, Giancarlo Panaccione and Regina Dittmann
  • Journal Title: Nanoscale Volume: 5 Issue: 9 Pages: 3954-3960
  • DOI: 10.1039/c3nr00106g
  • Peer Reviewed
• [Journal Article] Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interface (2013)
  • Author(s): Yoshiyuki Yamashita, Hideki Yoshikawa, Toyohiro Chikyow, and Keisuke Kobayashi
  • Journal Title: J. Appl. Phys. Volume: 113 Pages: 163707-163707
  • Peer Reviewed
• [Journal Article] New Direct Spectroscopic Method for Determination of Bias-Dependent Electronic States: Hard X-ray Photoelectron Spectroscopy Under Device Operation (2013)
  • Author(s): Yoshiyuki Yamashita, Hideki Yoshikawa, Toyohiro Chikyow, and Keisuke Kobayashi
  • Journal Title: Jpn. J. Appl. Phys Volume: 52 Issue: 10R Pages: 108005-108005
  • DOI: 10.7567/jjap.52.108005
  • NAID: 210000142961
  • Peer Reviewed
• [Journal Article] Investigation of the effect of oxygen on the near-surface electron accumulation in non-polar m-plane (10-10) InN Film by Hard X-ray Photoelectron Spectroscopy (2013)
  • Author(s): A. Yang, Y. Yamashita, H. Yoshikawa, T. Yamaguchi, M. Imura, M. Kaneko, S. Ueda, O. Sakata, Y. Nanishi, K. Kobayashi
  • Journal Title: Jpn. J. Appl. Phys Volume: 52 Issue: 8S Pages: 08JD01-08JD01
  • DOI: 10.7567/jjap.52.08jd01
  • Peer Reviewed
• [Journal Article] Systematic Investigation of Surface and Bulk Electronic Structure of Undoped In-polar InN Epilayers by Hard X-ray Photoelectron Spectroscopy (2013)
  • Author(s): M. Imura, S. Tsuda, T. Nagata, H. Takeda, L. Meiyong, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, Tomohiro, Masamitsu, Nao, Tsutomu, Yasushi
  • Journal Title: J. Appl. Phys Volume: 114 Issue: 3 Pages: 33505-33505
  • DOI: 10.1063/1.4812570
  • Peer Reviewed
• [Journal Article] Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies (2013)
  • Author(s): T. Tsuchiya, Miyoshi, Y. Yamashita, H. Yoshikawa, K. Terabe, K. Kobayashi, Yamaguchi
  • Journal Title: Sci. Tech. Adv. Mat Volume: 14 Issue: 4 Pages: 45001-45001
  • DOI: 10.1088/1468-6996/14/4/045001
  • Peer Reviewed
• [Journal Article] Direct observation of redox state modulation at carbon/amorphous tantalum oxide thin film hetero-interface probed bymeans of in situ hard X-ray photoemission spectroscopy (2013)
  • Author(s): T. Tsuchiya, Miyoshi, Y. Yamashita, H. Yoshikawa, K. Terabe, K. Kobayashi, Yamaguchi
  • Journal Title: Solid State Ion. Volume: 14 Pages: 110-118
  • DOI: 10.1016/j.ssi.2013.09.015
  • Peer Reviewed
• [Journal Article] Observation of filament formation process of Cu/HfO2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation (2012)
  • Author(s): T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, K. Kobayashi and T. Chikyow
  • Journal Title: J. Mater. Res Volume: 27 Issue: 6 Pages: 869-878
  • DOI: 10.1557/jmr.2011.448
  • Peer Reviewed
• [Journal Article] Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy (2012)
  • Author(s): A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer and C. S. Fadley
  • Journal Title: Appl. Phys. Lett Volume: 100 Issue: 26 Pages: 261603-261603
  • DOI: 10.1063/1.4731642
  • Peer Reviewed
• [Journal Article] Band bending and surface defects in β-Ga2O3 (2012)
  • Author(s): T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi and M. A. Olmstead
  • Journal Title: Appl. Phys. Lett Volume: 100 Issue: 18 Pages: 181602-181602
  • DOI: 10.1063/1.4711014
  • Peer Reviewed
• [Journal Article] Hard x-ray photoelectron spectroscopy study on band alignment at poly(3 4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface (2012)
  • Author(s): T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, R. Hayakawa, K. Kobayashi, T. Chikyow and Y. Wakayama
  • Journal Title: Appl. Phys. Lett Volume: 101 Issue: 17 Pages: 173303-173303
  • DOI: 10.1063/1.4762834
  • Peer Reviewed
• [Journal Article] Nondestructive characterization of a TiN metal gate: chemical and structural properties by means of standing-wave hard x-ray (2012)
  • Author(s): C. Papp, G. Conti, B. Balke, S. Ueda, Y. Yamashita, H. Yoshikawa, Y. S. Uritsky, K. Kobayashi, C. S. Fadley
  • Journal Title: J. Appl. Phys Volume: 112 Issue: 11 Pages: 114501-114501
  • DOI: 10.1063/1.4765720
  • Peer Reviewed
• [Journal Article] Polarity-dependent photoemission spectra of wurtzite-type zinc oxide (2012)
  • Author(s): J. Williams, H. Yoshikawa, S. Ueda, Y. Yamashita, K. Kobayashi, Y. Adachi, H. Haneda, T. Oogaki, H. Miyazaki, Takamasa Ishigaki, N. Ohash
  • Journal Title: Appl. Phys. Lett Volume: 100 Issue: 5 Pages: 51902-51902
  • DOI: 10.1063/1.3673553
  • Peer Reviewed
• [Journal Article] Determination of Schottky barrier profile at Pt/SrTiO3:Nb junction by x-ray photoemission (2012)
  • Author(s): N. Ohashi, H. Yoshikawa, Y. Yamashita, S. Ueda, J. Li, H. Okushi, K. Kobayashi and H. Haneda
  • Journal Title: Appl. Phys. Lett Volume: 101 Issue: 25 Pages: 251911-251911
  • DOI: 10.1063/1.4772628
  • Peer Reviewed
• [Journal Article] Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission (2012)
  • Author(s): A. A. Greer, A.X. Gray, Shun Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S.-H. Yang, G. Conti, K. Kobayashi, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, and C. S. Fadley
  • Journal Title: Applied Physics Letters Volume: 101 Issue: 20 Pages: 202402-202402
  • DOI: 10.1063/1.4766351
  • Peer Reviewed
• [Journal Article] Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface (2012)
  • Author(s): T. Nagata, Y. Yamashita, H. Yoshikawa, T. Uehara, M. Haemori, K. Kobayashi and T. Chikyow
  • Journal Title: J. Appl. Phys. Volume: 112 Issue: 11 Pages: 116104-116104
  • DOI: 10.1063/1.4768908
  • Peer Reviewed
• [Journal Article] Bulk Electronic structure of the dilute magnetic semiconductor Ga1-xMnxAs through hard x-ray angle-resolved photoemission (2012)
  • Author(s): A. X. Gray, J. Minar, S. Ueda, P. R. Stone, Y. Yamashita, J. Fujii, J. Braun, L. Plucinski, C. M. Schneider, G. Panaccione, H. Ebert, O. D. Dubon, K. Kobayashi, C. S. Fadley
  • Journal Title: Nat. Mater. Volume: 11 Issue: 11 Pages: 957-962
  • DOI: 10.1038/nmat3450
  • Peer Reviewed
• [Journal Article] Electronic Structure Changes across the Metamagnetic Transition in FeRh via Hard X-Ray Photoemission (2012)
  • Author(s): A. X. Gray, D. W. Cooke, E. E. Fullerton, S. Ueda, Y. Yamashita, A. Gloskovskii, C. M. Schneider, W. Drube, K. Kobayashi, F. Hellman, C. S. Fadley
  • Journal Title: Phys. Rev. Lett Volume: 108 Issue: 25 Pages: 257208-257208
  • DOI: 10.1103/physrevlett.108.257208
  • Peer Reviewed
• [Journal Article] Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films (2012)
  • Author(s): A.Yang, Y.Yamashita, T.Yamaguchi, M.Imura, M.Kaneko, O.Sakata, Y.Nanishi, K.Kobayashi
  • Journal Title: Applied Physics Express Volume: 5 Issue: 3 Pages: 031002-031002
  • DOI: 10.1143/apex.5.031002
  • NAID: 10030510922
  • Peer Reviewed
• [Journal Article] Bias-application in Hard X-ray Photoelectronic Study for Advanced Materials (2011)
  • Author(s): 山下良之,長田貴弘,吉川英樹,知京豊祐,小林啓介
  • Journal Title: Hyomen Kagaku Volume: 32 Issue: 6 Pages: 320-324
  • DOI: 10.1380/jsssj.32.320
  • NAID: 10028287758
  • ISSN: 0388-5321, 1881-4743
  • Peer Reviewed
• [Journal Article] Direct Observation of Electronic States in Gate Stack Structures: XPS under Device Operation (2011)
  • Author(s): Y. Yamashita, H. Yoshikawa, T. Chikyo, and K. Kobayashi
  • Journal Title: ECS Transactions Volume: 41 Issue: 7 Pages: 331-336
  • DOI: 10.1149/1.3633313
  • Peer Reviewed
• [Journal Article] Bias application hard X-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure (2011)
  • Author(s): 長田貴弘,南風盛将光,山下良之,吉川英樹,岩下祐太,小林啓介,知京豊裕
  • Journal Title: APPLIED PHYSICS LETTERS Volume: 99 Issue: 22
  • DOI: 10.1063/1.3664781
  • Peer Reviewed
• [Journal Article] XPS Study on Sb-/In- doping effects on the Fermi level and surface Fermi level pinning of SnO2 (101) thin films (2011)
  • Author(s): 長田貴弘,Bierwagen Oliver ,White Mark, Tsai Min-Ying,山下良之,吉川英樹,大橋直樹,小林啓介,知京豊裕,Speck James
  • Journal Title: APPLIED PHYSICS LETTERS Volume: 98 Issue: 23
  • DOI: 10.1063/1.3596449
  • Peer Reviewed
• [Journal Article] Study of Oxygen Migration at Pt/HfO2/Pt Interface by Bias-application Hard X-ray Photoelectron Spectroscopy (2011)
  • Author(s): 長田貴弘,山下良之,小林啓介
  • Journal Title: SPring-8 Research Frontiers Volume: 2011 Pages: 70-71
  • Peer Reviewed
• [Journal Article] Probing bulk electronic structure with hard X-ray angle-resolved photoemission (2011)
  • Author(s): A. X. Gray,C. Papp,上田茂典,B. Balke,山下良之,L. Plucinski,J. Minar,J. Braun,E. R. Ylvisaker,C. M. Schneider,W. E. Pickett,H. Ebert,小林啓介,C. S. Fadley
  • Journal Title: NATURE MATERIALS Volume: 10 Issue: 10 Pages: 759-764
  • DOI: 10.1038/nmat3089
  • Peer Reviewed
• [Journal Article] Energy-level alignments and photo-induced carrier processes at the heteromolecular interface of quaterrylene and N,N0-dioctyl-3,4,9,10-perylenedicarboximide (2011)
  • Author(s): 廣芝伸哉,早川竜馬,知京豊裕,山下良之,吉川英樹,小林啓 介,森本 健太,松石 清人,若山裕
  • Journal Title: PHYSICAL CHEMISTRY CHEMICAL PHYSICS Volume: 13 Issue: 13 Pages: 6280-6285
  • DOI: 10.1039/c0cp02663h
  • Peer Reviewed
• [Journal Article] Structural analysis and Electrical Properties of Pure Ge3N4 Dielectric Layers Formed by an Atmospheric-pressure Nitrogen Plasma (2011)
  • Author(s): 早川竜馬,吉田 真司,井出康太,山下良之,吉川英樹,小林啓介,功刀俊介,上原剛,藤村紀文
  • Journal Title: JOURNAL OF APPLIED PHYSICS, Volume: 110 Issue: 6
  • DOI: 10.1063/1.3638133
  • Peer Reviewed
• [Presentation] デバイス動作下硬Ｘ線光電子分光法による半導体素子の界面評価 (2015)
  • Author(s): 山下良之
  • Organizer: ゲートスタック研究会―材料・プロセス・評価の物理―、応用物理学会
  • Place of Presentation: 東レ研修センター
  • Year and Date: 2015-01-29 – 2015-01-30
  • Invited
• [Presentation] デバイス動作下における電子状態変化のその場観察／硬X線光電子分光装置 (2015)
  • Author(s): 山下良之
  • Organizer: テクノロジー・ショーケース2015
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2015-01-21
  • Invited
• [Presentation] デバイス動作下硬X線光電子分光法による界面電子状態の直接観測 (2014)
  • Author(s): 山下良之
  • Organizer: 深さ方向分析の最前線、表面科学会
  • Place of Presentation: 東京理科大学
  • Year and Date: 2014-11-21
  • Invited
• [Presentation] デバイス動作下での電子状態の直接観測 (2014)
  • Author(s): 山下良之
  • Organizer: 表面界面におけるエネルギーの移動と変換、理化学研究所
  • Place of Presentation: 理化学研究所
  • Year and Date: 2014-11-21
  • Invited
• [Presentation] 硬X線光電子分光法によるエレクトロニクスデバイスのオペランド測定 (2014)
  • Author(s): 山下良之
  • Organizer: 東京大学物性研究所短期研究会 「最先端オペランド観測で明らかになる物性科学」
  • Place of Presentation: 東京大学 物性研究所
  • Year and Date: 2014-09-29 – 2014-09-30
  • Invited
• [Presentation] バイアス印加硬X線光電子分光法によるゲートスタック構造内 のポテンシャル分布の直接観測 (2013)
  • Author(s): 山下良之, 吉川英樹, 知京豊裕, 小林啓介
  • Organizer: 第33回日本表面科学学術講演会
  • Place of Presentation: つくば
• [Presentation] Electronic Structures under High - k Device Operation: XPS Study (2013)
  • Author(s): Y. Yamashita
  • Organizer: JJAPーMRS
  • Place of Presentation: 同志社大学
  • Invited
• [Presentation] “Direct observation of electronic states in gate stack structures: XPS under device operation (2013)
  • Author(s): Y. Yamashita, H. Yoshikawa, T. Chikyo, K. Kobayashi
  • Organizer: 19th International Vacuum Congress
  • Place of Presentation: Paris
• [Presentation] Direct Observation of Electronic Structures in High-k Based Devices under Device Operation (2012)
  • Author(s): Yoshiyuki Yamashita
  • Organizer: UMRS-International Conference on Electronic Materials 2012
  • Place of Presentation: Yokohama, Japan
  • Invited
• [Presentation] Bias dependent electronic states in gate stack structures: HXPES under device operation (2012)
  • Author(s): YOSHIYUKI YAMASHITA,YOSHIKAWA Hideki,CHIKYO Toyohiro,NABATAME Toshihide,KOBAYASHI Keisuke
  • Organizer: 12th International Conference on Electron Spectroscopy and Structure
  • Place of Presentation: Saint-Malo, France
• [Presentation] Direct observation of electronic states in gate stack structures: XPS under device operation (2011)
  • Author(s): Yoshiyuki YAMASHITA
  • Organizer: 220th The Electrochemical Society meeting,The Electrochemical Society(招待講演)
  • Place of Presentation: Boston, USA
• [Presentation] Bias-application in Hard X-ray Photoelectron Spectroscopy for Characterization of Advanced Materials (2011)
  • Author(s): Y. Yamashita, H. Yoshikawa, T. Chikyo, and K. Kobayashi
  • Organizer: 28th European Conference on Surface Science
  • Place of Presentation: Wrocław, Poland
• [Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基盤・界面効果 (2013)
  • Author(s): 山下良之
  • Publisher: NTS