| Project/Area Number |
23560036
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | University of Fukui |
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Principal Investigator |
KATSUYAMA TOSHIO 福井大学, 工学(系)研究科(研究院), 教授 (90467134)
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| Co-Investigator(Kenkyū-buntansha) |
WADA Yasuo 東洋大学, 大学院学際・融合科学研究科, 教授 (50386736)
AOKI Kanna 神戸大学, 自然科学系先端融合研究環重点研究部, 助教 (90332254)
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| Project Period (FY) |
2011-04-28 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | シリコンフォトニクス / アモルファス・シリコン / Si細線導波路 / フォトニック結晶 / ベータ鉄シリサイド / シリコン細線導波路 |
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| Outline of Final Research Achievements |
We have studied optical devices based on amorphous Si (a-Si) in order to realize new large-area stacked structures composing silicon-based optical circuits. We have thus realized (1) an air-bridge-type a-Si slab structure with a large area (20 μm square), (2) a two-layered stacked optical circuit composed of an a-Si wire waveguide with an a-Si grating layer mediated by a SiO2 layer, and (3) a directional-coupler-type stacked light-emitting device composed of an a-Si wire waveguide with a β-FeSi2 light-emitting layer mediated by a SiO2 layer. As a result, it is shown that various stacked optical circuits can be realized by using a-Si material.
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