| Project/Area Number |
23560123
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Production engineering/Processing studies
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
UCHIKOSHI Junichi 大阪大学, 工学(系)研究科(研究院), 招へい教員 (90273581)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MORITA Mizuho 大阪大学, 大学院工学研究科, 教授 (50157905)
KAWAI Kentaro 大阪大学, 大学院工学研究科, 助教 (90514464)
|
|---|
| Project Period (FY) |
2011 – 2013
|
| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
|
|---|
| Keywords | フッ素化剤 / Ｎ－フルオロピリジニウム塩 / 光エッチング / 光転写 / シリコン / 3次元形状 / 半導体表面 / 形状創成 / N-フルオロピリジニウム塩 / エッチング / フォトエッチング / 創成加工 / 修正加工 |
|---|
| Research Abstract |
A new photo-etching method with N-fluoropyridinium salts is proposed in this study. Si is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. Si is etched by the irradiation of light with an energy higher than the band gap of Si. The N-F bond in the salts is broken by receiving excited electrons and releases an active F species. The F species react with Si to produce SiF4. The SiF4 is released.
The etching rate increases with exposure time or light intensity or temperature. A ditch with different depths and a spherical surface and a flat surface are formed by exposing to light with different intensities at a time. It is expected to form arbitrary three-dimensional shape in a silicon surface by controlling light intensity distribution.
Absolute flatness of three silicon plane mirrors have been measured by a three-intersection method based on the three-flat method using a near-infrared interferometer.
|
