| Project/Area Number |
23560143
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Kansai University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SHIMADA Shoichi 大阪電気通信大学, 工学部, 教授 (20029317)
FURUSHIRO Naomichi 関西大学, システム理工学部, 助教 (80511716)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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| Keywords | 超精密加工 / 超仕上 / 平滑加工 / メカノケミカル / ダイヤモンド / 複合砥粒砥石 / サファイア / シリコン / 超砥粒砥石 / 硫酸バリウム / コロイダルシリカ / 酸化セリウム |
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| Research Abstract |
In the previous study, cBN/CeO2 stone, which is a type of mechanochemical superabrasive stone containing CeO2, was developed. Moreover, it was made clear that this stone produced less subsurface damage and smaller compressive residual stress than cBN stone.
In this study, the super planarization of silicon or sapphire as new substrate material was tried through superfinishing with several mechanochemical superabrasive stones. As a result, the surface roughness of each work by this superfinishing was approximately equal to that by conventional lapping and was produced in 3 minutes for silicon or 15 minutes for sapphire. On the other hand, the construction of the topography model of cBN/CeO2 stone, which was a subject of the previous study, was completed.
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