| Project/Area Number |
23560354
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hirosaki University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
TAWARA Takehiko NTT物性科学基礎研究所, 量子光物性研究部, 主任研究員 (40393798)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 量子ドット / サーファクタント / DLTS / DLTS法 |
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| Research Abstract |
Quantum dots (QDs) have a potential to improve the performance of various semiconductor devices. We have reported a novel growth method for In(Ga)As QDs using bismuth (Bi) as a surfactant, and their superior optical qualities. For the purpose of clarifying the mechanism of appearing the excellent quality, we have evaluated the QDs mainly using DLTS (Deep Level Transient Spectroscopy) method. We have successfully observed the unique DLTS signals, which are caused by the emission of captured carriers, and revealed that the densities of traps caused by point defects or dislocations are very low in the QD samples.
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