The fabrication of the novel semiconducting material for solar cells which does not use a rare metal
Project/Area Number |
23560357
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Gunma University |
Principal Investigator |
OZAKI Shunji 群馬大学, 理工学研究科, 准教授 (80302454)
|
Project Period (FY) |
2011 – 2013
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
|
Keywords | 多元化合物半導体結晶成長 |
Research Abstract |
The quaternary semiconductor Cu2ZnSnSe4 and Cu2ZnSnS4 crystals were grown by the vertical Bridgman method. Optical absorption measurements indicate that both Cu2ZnSnSe4 and Cu2ZnSnS4 are direct-gap semiconductors, and having the band gap energies of 1.12 and 1.48 eV at 10 K, respectively. The thermoreflectance spectra reveal distinct structures at energies of the E0-E6 critical points (CP's). From the first-principle band-structure calculations, these CP's are assigned to specific points in the Brillouin zone.
|
Report
(4 results)
Research Products
(28 results)