| Project/Area Number |
23560359
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Research Collaborator |
AKIYAMA Hidefumi 東京大学, 物性研究所, 准教授 (40251491)
KIM Changsu 東京大学, 物性研究所, 研究員
PFEIFFER Loren Princeton University, Electrical Engineering, Senior Research Scholar
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 結晶工学 / 表面・界面物性 / 半導体材料 / GaAs(110)面 / 原子平坦表面 / 量子井戸 / 量子細線 |
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| Research Abstract |
In this work, I investigated formation mechanisms of atomically flat surfaces on GaAs(110) by growth-interruption annealing. I performed growth-interrupt anneal on the epitaxial surfaces grown, by molecular-beam epitaxy, on the cleaved (110) edges of GaAs(001) wafers. After annealing, atomically flat surfaces accompanied with characteristic-shaped monatomic-layer step edges, which depend on the crystallographic direction of the introduced thickness distribution of the epitaxial layers, were formed. The results imply that the flat-surface formation during annealing is largely influenced by crystallographic anisotropy of migration potential of adatoms on GaAs(110).
In addition, I developed a waveguide-transmission spectroscopy method to be used for quantitative characterization of optical properties (emission, absorption, etc.) of the GaAs(110) quantum wells with atomically-flat hetero-interfaces formed by the growth-interrupt annealing technique, has been developed.
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