Improvement in Characteristics of Crystalline Silicon Solar Cells by High-Pressure Water Vapor Heat Treatment

• Project/Area Number: 23560360
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: HASUMI Masahiko 東京農工大学, 工学(系)研究科(研究院), 助教 (60261153)
• Co-Investigator(Renkei-kenkyūsha): SAMESHIMA Toshiyuki 東京農工大学, 大学院工学研究院, 教授 (30271597)
• Project Period (FY): 2011 – 2013
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: ソーラーセル / 水蒸気熱処理 / 少数キャリアライフタイム / マイクロ波吸収 / 太陽電池 / シリコン / マイクロ波吸収測定 / ライフタイム

Research Abstract

Improvement in a conversion efficiency of a-Si:H p-i-n solar cells were achieved by heat treatment with high-pressure H2O vapor. This treatment has a capability of curing poor solar cell characteristics.
We constructed the microwave transmittance measurement system to precisely measure the effective minority carrier lifetime with the two different wavelength light illumination. The present technique has a capability of application to monitoring semiconductor quality especially photosensitivity in semiconductor device processing.

Research Products

• [Journal Article] Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source (2014)
  • Author(s): M. Hasumi, T. Nakamura, S. Yoshidomi, and T. Sameshima
  • Journal Title: Jpn. J. Appl. Phys Volume: 53
  • NAID: 210000143902
  • Peer Reviewed
• [Journal Article] Multi junction solar cells using band-gap induced cascaded light absorption (2014)
  • Author(s): T. Sameshima, H. Nomura, S. Yoshidomi, and M. Hasumi
  • Journal Title: Jpn. J. Appl. Phys Volume: 53
  • NAID: 210000143904
  • Peer Reviewed
• [Journal Article] Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure (2014)
  • Author(s): T. Sameshima, J. Furukawa, T. Nakamura, S. Shigeno, T. Node, S. Yoshidomi, and M. Hasumi
  • Journal Title: Jpn. J. Appl. Phys Volume: 53
  • NAID: 210000143406
  • Peer Reviewed
• [Journal Article] Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source (2014)
  • Author(s): Masahiko Hasumi, Tomohiko Nakamura, Shinya Yoshidomi, and Toshiyuki Sameshima
  • Journal Title: Jpn. J. Appl. Phys Volume: 53 Issue: 5S1 Pages: 05FV05-05FV05
  • DOI: 10.7567/jjap.53.05fv05
  • NAID: 210000143902
  • Peer Reviewed
• [Journal Article] Multi junction solar cells using band-gap induced cascaded light absorption (2014)
  • Author(s): Toshiyuki Sameshima, Hitomi Nomura, Shinya Yoshidomi, and Masahiko Hasumi
  • Journal Title: Jpn. J. Appl. Phys Volume: 53 Issue: 5S1 Pages: 05FV07-05FV07
  • DOI: 10.7567/jjap.53.05fv07
  • NAID: 210000143904
  • Peer Reviewed
• [Journal Article] Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure (2014)
  • Author(s): Toshiyuki Sameshima, Jun Furukawa, Tomohiko Nakamura, Satoshi Shigeno, Tomohito Node, Shinya Yoshidomi, and Masahiko Hasumi
  • Journal Title: Jpn. J. Appl. Phys Volume: 53 Issue: 3 Pages: 031301-031301
  • DOI: 10.7567/jjap.53.031301
  • NAID: 210000143406
  • Peer Reviewed
• [Journal Article] Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement (2013)
  • Author(s): T. Sameshima, R. Ebina, K. Betsuin, Y. Takiguchi, and M. Hasumi
  • Journal Title: Jpn. J. Appl. Phys Volume: 52
  • NAID: 210000141723
  • Peer Reviewed
• [Journal Article] Investigation of Silicon Surface Passivation by Microwave Annealing, Jpn (2013)
  • Author(s): T. Sameshima
  • Journal Title: J. Appl. Phys Volume: Vol.52 Issue: 1R Pages: 11801-11801
  • DOI: 10.7567/jjap.52.011801
  • Peer Reviewed
• [Journal Article] Heat treatment of amorphous silicon p-i-n solar cells with high-pressure H2O vapor (2012)
  • Author(s): J. Takenezawa, M. Hasumi, T. Sameshima, T. Koida, T. Kaneko, M. Karasawa, and M. Kondo
  • Journal Title: J. Non-Cryst. Solids Volume: 358
  • Peer Reviewed
• [Journal Article] Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment (2012)
  • Author(s): T. Sameshima, T. Nagao, M. Hasumi, A. Shuku, E. Takahashi, and Y. Andoh
  • Journal Title: Jpn. J. Appl. Phys Volume: 51
  • NAID: 210000140378
  • Peer Reviewed
• [Journal Article] Heat Treatment of Amorphous Silicon p-i-n Solar Cells with High-Pressure H2O Vapor (2012)
  • Author(s): J. Takenezawa
  • Journal Title: Journal of Non-Crystalline Solids Volume: 358 Issue: 17 Pages: 2285-2288
  • DOI: 10.1016/j.jnoncrysol.2012.01.057
  • Peer Reviewed
• [Journal Article] Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H_2O Vapor Heat Treatment (2012)
  • Author(s): T. Sameshima, T. Nagao, M. Hasumi, A.Shuku, E.Takahashi
  • Journal Title: Jpn. J. Appl. Phys Volume: Vol.51 Issue: 3S Pages: 03CA06-03CA06
  • DOI: 10.1143/jjap.51.03ca06
  • Peer Reviewed
• [Journal Article] Fabrication of Aluminum Oxide Films by Aluminum Metal Evaporation in Oxygen Gas Atmosphere for Surface Passivation (2011)
  • Author(s): M. Hasumi, Y. Kanda, S. Yoshidomi, and T. Sameshima
  • Journal Title: Technical Digest of the 24^<th> Int. Photovoltaic Solar Energy Conf
• [Journal Article] Fabrication of Aluminum Oxide Films by Aluminum Metal Evaporation in Oxygen Gas Atmosphere for Surface Passivation (2011)
  • Author(s): M. Hasumi, Y. Kanda, S. Yoshidomi, and T. Sameshima
  • Journal Title: Technical Digest of the 24th Int. Photovoltaic Solar Energy Conf. Volume: 1
• [Presentation] Crystallization of Amorphous Silicon Thin Films by Microwave Heating (2014)
  • Author(s): 中村友彦, 吉冨真也, 蓮見真彦, 鮫島俊之
  • Organizer: 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
  • Year and Date: 2014-03-19
• [Presentation] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating (2013)
  • Author(s): T. Sameshima, T. Nakamura, S. Yoshidomi, M. Hasumi, T. Ishii, Y. Inouchi, M. Naito and T. Mizuno
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Hilton Fukuoka Sea Hawk
  • Year and Date: 2013-09-26
• [Presentation] Silicon Surface Oxidation and Passivation by Remote Induction-Coupled Oxygen Plasma (2013)
  • Author(s): 鮫島俊之, 蓮見真彦, 吉冨真也, 中村友彦, 滋野聖
  • Organizer: 応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学
  • Year and Date: 2013-09-17
• [Presentation] Multi-Connected Solar Cells Using Band-Gap Induced Cascaded Light Absorption (2013)
  • Author(s): T. Sameshima, S. Yoshidomi, and M. Hasumi
  • Organizer: JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisha Univ
  • Year and Date: 2013-09-16
• [Presentation] Microwave Annealing of Phosphorus Implanted p-type Silicon (2013)
  • Author(s): M. Hasumi, S. Yoshidomi, and T. Sameshima
  • Organizer: JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisha Univ
  • Year and Date: 2013-09-16
• [Presentation] Activation of Silicon Implanted with Phosphorus Atoms by Microwave Heating (2013)
  • Author(s): S. Yoshidomi, C. Akiyama, J. Furukawa, M. Hasumi, T. Ishii, T. Sameshima, Y. Inouchi, and M. Nait
  • Organizer: International Workshop on Active-Matrix Flatpanel Displays and Devices
  • Place of Presentation: Ryukoku Univ
  • Year and Date: 2013-07-04
• [Presentation] Minority Carrier Annihilation at Crystalline Silicon Surface in MOS Structure (2013)
  • Author(s): J. Furukawa, S. Yoshidomi, M. Hasumi, and T. Sameshima
  • Organizer: International Workshop on Active-Matrix Flatpanel Displays and Devices
  • Place of Presentation: Ryukoku Univ
  • Year and Date: 2013-07-04
• [Presentation] MOS構造における結晶シリコン表面の少数キャリア再結合 (2013)
  • Author(s): 古川潤, 吉冨真也, 蓮見真彦, 鮫島俊之
  • Organizer: 応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-28
• [Presentation] Minority Carrier Lifetime Measurements by Multiple Wavelength Light Induced Carrier Microwave Absorption Method (2012)
  • Author(s): T. Sameshima, Y. Takiguchi, T. Nagao, and M. Hasumi
  • Organizer: International Workshop on Active-Matrix Flatpanel Displays and Devices
  • Place of Presentation: Ryukoku Univ
  • Year and Date: 2012-07-04
• [Presentation] Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method (2012)
  • Author(s): T. Sameshima, K. Betsuin, T. Nagao, and M. Hasumi
  • Organizer: International Workshop on Active-Matrix Flatpanel Displays and Devices
  • Place of Presentation: Ryukoku Univ
  • Year and Date: 2012-07-04
• [Presentation] 多波長光照射によるマイクロ波フリーキャリヤ吸収を用いた半導体少数キャリヤ消滅特性の調査 (2012)
  • Author(s): 滝口裕太, 永尾友一, 蓮見真彦, 鮫島俊之
  • Organizer: 応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-18
• [Presentation] リモート酸素プラズマ処理と高圧水蒸気熱処理によるシリコン表面パッシベーション (2012)
  • Author(s): 永冨佳将, 蓮見真彦, 鮫島俊之
  • Organizer: 応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-18
• [Presentation] Minority Carrier Lifetime Measurements by Multiple Wavelength Light Induced Carrier Microwave Absorption Method (2012)
  • Author(s): T. Sameshima, Y. Takiguchi, T. Ngao, M. Hasumi
  • Organizer: THE 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
  • Place of Presentation: Ryukoku University
• [Presentation] Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method (2012)
  • Author(s): T. Sameshima, K. Betsuin, T. Nagao, M. Hasumi
  • Organizer: THE 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
  • Place of Presentation: Ryukoku University
• [Presentation] 多波長光照射によるマイクロ波フリーキャリヤ吸収を用いた半導体少数キャリヤ消滅特性の調査 (2012)
  • Author(s): 滝口裕太，永尾友一，蓮見真彦，鮫島俊之
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] リモート酸素プラズマ処理と高圧水蒸気熱処理によるシリコン表面パッシベーション (2012)
  • Author(s): 永冨佳将，蓮見真彦，鮫島俊之
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] シリコン表面における光誘起少数キャリヤ再結合消滅挙動 (2012)
  • Author(s): 古川 潤，滝口裕太，永尾友一，蓮見真彦，鮫島俊之
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] Heat Treatment of Amorphous Silicon p-i-n Solar Cells with High-Pressure H2O Vapor (2011)
  • Author(s): M. Hasumi, J. Takenezawa, T. Sameshima, T. Koida, T. Kaneko, M. Karasawa, and M. Kondo
  • Organizer: International Conference on Amorphous and Nanocrystalline Semiconductors
  • Place of Presentation: Nara Prefectural New Public Hall
  • Year and Date: 2011-08-23
• [Presentation] High-Pressure H2O Vapor Heat Treatment Used to Improve Polycrystalline Silicon Soar Cell Characteristics (2011)
  • Author(s): J. Takenezawa, M. Hasumi, and T. Sameshima
  • Organizer: International Workshop on Active-Matrix Flatpanel Displays and Devices
  • Place of Presentation: Ryukoku Univ
  • Year and Date: 2011-07-12
• [Presentation] シリコンの少数キャリヤライフタイムの種々の外部刺激による変化 (2011)
  • Author(s): 鮫島俊之、別院公一、蓮見真彦
  • Organizer: 第８回薄膜材料デバイス研究会
  • Place of Presentation: 龍谷大学
• [Presentation] J. Takenezawa, M. Hasumi, T. Sameshima (2011)
  • Author(s): High-Pressure H2O Vapor Heat Treatment Used to Improve Polycrystalline Solar Cell Characteristics
  • Organizer: THE EIGHTEENTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
  • Place of Presentation: 龍谷大学
• [Presentation] Masahiko Hasumi, Jun Takenezawa, Toshiyuki Sameshima, Takashi Koida, Tetsuya Kaneko, Minoru Karasawa, Michio Kondo (2011)
  • Author(s): Heat Treatment of Amorphous Silicon p-i-n Solar Cells with High-Pressure H2O Vapor
  • Organizer: 24th International Conference on Amorphous and Nanocrystalline Semiconductors
  • Place of Presentation: 奈良
• [Presentation] Atsushi Kohno, Takayuki Tajiri, Shinya Yoshidomi, Masahiko Hasumi, Toshiyuki Sameshima (2011)
  • Author(s): Chemical Bonding and Valence Band States of SiO2 Thin Film Prepared by Oxygen Plasma Followed by High-Pressure H2O Vapor Heat Treatment
  • Organizer: 24th International Conference on Amorphous and Nanocrystalline Semiconductors
  • Place of Presentation: 奈良
• [Presentation] Oxygen Radical Treatment used for Fabricating Metal-Insulator-Semiconductor Solar Cells
  • Author(s): 滋野聖，吉冨真也，蓮見真彦，鮫島俊之
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] Crystallization of Amorphous Silicon Thin Films by Microwave Heating
  • Author(s): 中村友彦，吉冨真也，蓮見真彦，鮫島俊之
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] 酸素プラズマ処理によるシリコン表面パッシベーション
  • Author(s): 野手智仁，吉冨真也，古川潤，阿部博史，蓮見真彦，鮫島俊之
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] Silicon Surface oxidation and Passivation by Remote Induction-Coupled Oxygen Plasma
  • Author(s): 鮫島俊之，蓮見真彦，吉冨真也，中村友彦，滋野聖
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス
• [Presentation] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating
  • Author(s): 中村友彦，滋野聖，吉冨真也，蓮見真彦，石井寿子，鮫島俊之，井内裕，内藤勝男，水野智久
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス
• [Presentation] Multi-Connected Solar Cells Using Band-Gap Induced Cascaded Light Absorption
  • Author(s): TOSHIYUKI SAMESHIMA, SHINYA YOSHIDOMI and MASAHIKO HASUMI
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisha University, Kyoto
• [Presentation] Microwave Annealing of Phosphorus Implanted p-type Silicon
  • Author(s): Masahiko Hasumi, Shinya Yoshidomi and Toshiyuki Sameshima
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisha University, Kyoto
• [Presentation] Passivation of silicon surface by laser rapid heating
  • Author(s): Toshiyuki Sameshima, Hiroshi Abe, Masahiko Hasumi, Tomohisa Mizuno, Naoki Sano
  • Organizer: LPM2013
  • Place of Presentation: Toki Messe, Niigata
• [Presentation] Activation of Silicon Implanted with Phosphorus Atoms by Microwave Heating
  • Author(s): S. Yoshidomi, C. Akiyama, J.Furukawa, M. Hsumi, T. Ishii, T. Sameshima, Y. Inouchi, M. Naito
  • Organizer: THE TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
  • Place of Presentation: Ryukoku University Avanti Kyoto Hall, Kyoto
• [Presentation] Minority Carrier Annihilation at Crystalline SiliconSurface in MOS Structure
  • Author(s): J. Furukawa, S. Yoshidomi, M. Hasumi, T. Sameshima
  • Organizer: THE TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
  • Place of Presentation: Ryukoku University Avanti Kyoto Hall, Kyoto
• [Presentation] MOS 構造における結晶シリコン表面の少数キャリヤ再結合
  • Author(s): 古川潤，吉冨真也，蓮見真彦，鮫島俊之
  • Organizer: 第 60 回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Remarks]
  • URL: http://www.tuat.ac.jp/~sameken/