Preparation of CuInS2 films by sputtering Cu and In in Ar-diluted H2S reactive gas with the facing target system
| Project/Area Number |
23560361
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Niigata University |
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Principal Investigator |
TSUBOI Nozomu 新潟大学, 自然科学系, 教授 (70217371)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 薄膜太陽電池 / カルコパイライト / スパッタ法 / 銅インジウム硫化物 |
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| Research Abstract |
CuInS2 films with various [Cu]/[In] ratios were deposited by sputtering alternatively Cu- and In-facing-targets under Ar-diluted H2S atmosphere. Composition of the films corresponded to the (CuxS)-(CuInS2) system line. Stoichiometric CuInS2 films exhibited the absorption-edge corresponding to the energy-gap of CuInS2. Multilayer structures such as ZnO:Al/ZnO/ZnS/CuInS2/Mo/glass were prepared for the solar-cell application.
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Report
(4 results)
Research Products
(35 results)
