Study on heteroepitaxial growth of compound semiconductor and nanostructures
| Project/Area Number |
23560369
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Saga University |
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Principal Investigator |
GUO Qixin 佐賀大学, シンクロトロン光応用研究センター, 教授 (60243995)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 化合物 / 半導体 / ヘテロ成長 / 光学特性 / 電気特性 / バンドオフセット |
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| Research Abstract |
ZnTe is a promising material for high efficiency pure green LED. In this study, we investigated p-type ZnTe heteroepitaxial growth on n-type ZnO. X-ray diffraction, Raman spectroscopy and photoluminescence analysis revealed that p-type ZnTe(111) epitaxial films are obtained. Diode rectification was clearly observed from the current-voltage (I-V) characteristics of the ZnTe/ZnO hetero structure. These results and achievements were published on international journals such as Applied Physics Letters.
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Report
(4 results)
Research Products
(30 results)
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[Journal Article] Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy2013
Author(s)
Guo, Q., Takahashi, K., Saito, K., Akiyama, H., Tanaka, T., Nishio, M.
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Journal Title
Applied Physics Letters
Volume: 102
Issue: 9
DOI
Related Report
Peer Reviewed
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