Preparation of metal free silicon clathrates and the application to thermoelectric conversion materials
| Project/Area Number |
23560377
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Gifu National College of Technology (2011, 2013-2014)
Toyota National College of Technology (2012) |
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Principal Investigator |
HABUCHI Hitoe 岐阜工業高等専門学校, その他部局等, 准教授 (90270264)
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| Project Period (FY) |
2011-04-28 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | シリコンクラスレート / イオン注入 / 熱電変換材料 / 薄膜 |
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| Outline of Final Research Achievements |
Rare gas and silicon compounds were synthesized as a starting material to prepare metal free silicon clathrates. It is theoretically possible to obtain the clathrate by annealing the rare gas and silicon compounds. At first, the compound was synthesized by sputtering using Krypton gas. As a result, Kr/Si ratio was small and oxygen was included as an impurity. Next, the xenon and silicon mixed layer were obtained by ion implantation method. Xenon was effused out after annealing in vacuum. To avoid the effusion of xenon, annealing was done with applying pressure of 100 atm. Xenon could be kept in silicon after the high pressure anneal at 530 °C. Finally, metal free silicon clathrates could not be obtained, but basic data to prepare silicon clathrates with the rare gas guest were founded out.
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Report
(5 results)
Research Products
(13 results)
