| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Outline of Final Research Achievements |
Rare gas and silicon compounds were synthesized as a starting material to prepare metal free silicon clathrates. It is theoretically possible to obtain the clathrate by annealing the rare gas and silicon compounds. At first, the compound was synthesized by sputtering using Krypton gas. As a result, Kr/Si ratio was small and oxygen was included as an impurity. Next, the xenon and silicon mixed layer were obtained by ion implantation method. Xenon was effused out after annealing in vacuum. To avoid the effusion of xenon, annealing was done with applying pressure of 100 atm. Xenon could be kept in silicon after the high pressure anneal at 530 °C. Finally, metal free silicon clathrates could not be obtained, but basic data to prepare silicon clathrates with the rare gas guest were founded out.
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