• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Hydrogen sensors using nitride-based semiconsuctor devices

Research Project

Project/Area Number 23560380
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute for Materials Science

Principal Investigator

IROKAWA Yoshihiro  独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (90394832)

Co-Investigator(Renkei-kenkyūsha) NAKANO Yoshitaka  中部大学, 総合工学研究所 (60394722)
Project Period (FY) 2011-04-28 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Keywords水素 / 窒化物半導体 / 界面 / 窒化アルミニウム
Outline of Final Research Achievements

The interaction of hydrogen with semiconductor devices has long been studied for applications in various semiconductor-based hydrogen sensors. Intensive research led to a model which attributes the reaction mechanism of the devices to hydrogen to the formation of a hydrogen-induced dipole layer at the metal-dielectric interface. Despite the existence of a considerable quantity of experimental data, however, there are still some debates as to the origin of the hydrogen sensitivity. In this research, it was found that hydrogen may not create electric double layer at the interface but change the property of the dielectric layers.

Report

(5 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Research-status Report
  • 2012 Research-status Report
  • 2011 Research-status Report
  • Research Products

    (8 results)

All 2014 2013 2012 2011

All Journal Article (3 results) (of which Peer Reviewed: 3 results,  Acknowledgement Compliant: 1 results) Presentation (3 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes2014

    • Author(s)
      Yoshihiro Irokawa
    • Journal Title

      ECS Electrochemistry Letters

      Volume: 3 Issue: 11 Pages: B17-B19

    • DOI

      10.1149/2.0041411eel

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Interface states in metal-insulator-semiconductor Pt-GaN diode hydrogen sensors2013

    • Author(s)
      Yoshihiro Irokawa
    • Journal Title

      J. Appl. Phys.

      Volume: 113 Issue: 2

    • DOI

      10.1063/1.4775410

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] SBDs on AlN Free-Standing Substrates2012

    • Author(s)
      Yoshihiro Irokawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 51 Issue: 4R Pages: 040206-040206

    • DOI

      10.1143/jjap.51.040206

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Presentation] Hydrogen sensors based on GaN diodes: The sensing mechanism2012

    • Author(s)
      Yoshihiro Irokawa
    • Organizer
      IEEE SENSORS 2012
    • Place of Presentation
      Taipei International Convention Center,Taipei,Taiwan
    • Related Report
      2012 Research-status Report
  • [Presentation] Solid state hydrogen gas sensing2011

    • Author(s)
      Yoshihiro Irokawa
    • Organizer
      Nano Korea 2011(招待講演)
    • Place of Presentation
      Seoul, Korea
    • Related Report
      2011 Research-status Report
  • [Presentation] Hydrogen Interaction with GaN MIS Diodes2011

    • Author(s)
      Yoshihiro Irokawa
    • Organizer
      26th ICDS
    • Place of Presentation
      Nelson, New Zealand
    • Related Report
      2011 Research-status Report
  • [Patent(Industrial Property Rights)] 密封型窒化物半導体素子及びその製造方法2013

    • Inventor(s)
      色川 芳宏
    • Industrial Property Rights Holder
      色川 芳宏
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-010755
    • Filing Date
      2013-01-24
    • Related Report
      2012 Research-status Report
  • [Patent(Industrial Property Rights)] AlN単結晶ダイオード及びその製造方法2012

    • Inventor(s)
      色川芳宏
    • Industrial Property Rights Holder
      色川芳宏
    • Industrial Property Number
      2012-016926
    • Filing Date
      2012
    • Related Report
      2011 Research-status Report

URL: 

Published: 2011-08-05   Modified: 2019-07-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi