| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
|
|---|
| Outline of Final Research Achievements |
In future optical access network based on WDM-PON, wavelength-tunable narrow bandpass filters (BPFs) are required for colorless optical network units. Tunable BPFs using a-Si:D/SiOx multilayer have simple structure, high productivity, narrow bandpass (0.8 nm), and wide tuning range (30 nm). The tunable BPF is based on thermo-optic effect in thin film of amorphous silicon. In fabrication, a-Si:D/SiOx multilayer was deposited using RF magnetron sputtering. A heating layer of ITiO film was formed on the multilayer in advance. The BPF chip size was 2x2 mm^2 and 0.05 mmt. When current is applied to the heater layer, both temperature and selective wavelength of the BPF increase. We measured the center wavelength of the BPF chip when the power consumption at the heating layer was varied. The power of 0.3 W was used for the wavelength shift of +20 nm. It is noteworthy that the power required for the wavelength shift of +30 nm can be reduced to 0.45 W.
|
