Zinc oxide transparent transistor and its application to stacked image sensor
| Project/Area Number |
23560408
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kochi University of Technology |
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Principal Investigator |
FURUTA MAMORU 高知工科大学, 工学部, 教授 (20412439)
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| Co-Investigator(Kenkyū-buntansha) |
URAOKA Yukiharu 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (20314536)
KIMURA Mutsumi 龍谷大学, 理工学部, 教授 (60368032)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 先端機能デバイス / 電子・電気材料 / 半導体物性 / 酸化物半導体 / 透明回路 / イメージセンサ / イメージセンサー / 薄膜トランジスタ / デバイスシミュレーション |
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| Research Abstract |
The aim of this research is to achieve transparent thin-film transistor by using wide-gap oxide semiconductors. Based on the analysis of the influence of lattice defects existing in an oxide semiconductor bulk and at an interface between insulator and oxide semiconductor on electrical properties and reliability of the transistor, we investigated the defect passivation method of oxide semiconductors.
As a consequence of this research, transparent thin-film transistor, which was not influenced by visible light irradiation, could be achieved, and the stacked organic image sensor has been successively demonstrated with transparent signal readout circuits.
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Report
(4 results)
Research Products
(98 results)
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[Journal Article] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor2013
Author(s)
Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka
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Journal Title
Physica Status Solidi C
Volume: 10
Issue: 11
Pages: 1561-1564
DOI
Related Report
Peer Reviewed
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[Presentation] Thermal Degradation and Theoretical Analysisof Amorphous Oxide Thin-Film Transistor2013
Author(s)
S. Urakawa, S. Tomai, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Kimura, M. Horita, Y. Ishikawa, and Y. Uraoka
Organizer
The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 13)
Place of Presentation
Kyoto, Japan.
Related Report
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[Presentation] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor2013
Author(s)
S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Horita, Y. Ishikawa, and Y. Uraoka
Organizer
The 40th International Symposium on Compound Semiconductors (ISCS 2013)
Place of Presentation
Kobe, Japan
Related Report
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[Presentation] Degradation Phenomena in Amorphous Oxide Thin-Film Transistor by Self-Heating Effect2013
Author(s)
Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka
Organizer
The 9th International Thin-Film Transistor Conference 2013 (ITC2013)
Place of Presentation
The University of Tokyo, Tokyo, Japan.
Related Report
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