Theoretical study on abnormal phenomena and degradation in GaN-based HEMTs and reuction method of them
| Project/Area Number |
23560411
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shibaura Institute of Technology |
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Principal Investigator |
HORIO KAZUSHIGE 芝浦工業大学, システム工学部, 教授 (10165590)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | ガリウムナイトライド / HEMT / 電流コラプス / フィールドプレート / 耐圧 / ２次元解析 / バッファ層 / トラップ / 計算機解析 |
|---|
| Research Abstract |
Two-dimensional analysis of slow current transients in AlGaN/GaN field effecttransistors is performed and their mechanisms are studied. Also the method of reduce these slow transients is discussed. Particularly, it is shown that the slow transients are reduced by introducing a so-called field plate, and the optimum field-plate structures are discussed. It is also discussed how the off-state breakdown voltage is enhanced by introducing a field plate.
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Report
(4 results)
Research Products
(41 results)
