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Broadband optical devices using QDs array waveguides

Research Project

Project/Area Number 23560412
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionSophia University

Principal Investigator

SHIMOMURA Kazuhiko  上智大学, 理工学部, 教授 (90222041)

Project Period (FY) 2011 – 2013
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywords量子ドット / 広帯域光通信 / 光デバイス / 有機金属気相成長 / アレイ導波路
Research Abstract

We have studied broadband optical devices using array waveguide structure of QDs core by selective MOVPE growth. To obtain the broadband operational wavelength range, bandgap energy of each array waveguide and each layer of multi-stacked structure were designed by using double-capping procedure and strain control of buffer layer during the growth of QDs structure. We have fabricated four types 3 layer QDs array waveguide LED, and compared the electro-luminescence spectrum of these devices. To obtain the broadband spectrum, it is necessary to control the peak wavelength shift and the comparable output power of 3 layers. As a result, we have obtained more than 500nm FWHM and flat-topped spectrum of QDs LED.

Report

(4 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Research-status Report
  • 2011 Research-status Report
  • Research Products

    (83 results)

All 2014 2013 2012 2011 Other

All Journal Article (17 results) (of which Peer Reviewed: 17 results) Presentation (62 results) (of which Invited: 1 results) Book (1 results) Remarks (3 results)

  • [Journal Article] Current injected spectrum change in flat-topped InAs/InP QDs arrayed waveguide LED with different QD heights2013

    • Author(s)
      S. Yoshikawa, M. Yamauchi, Y. Yamamoto, K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: vol.10, no.11 Pages: 1438-1441

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Current injected spectrum change in flat-topped InAs/InP QDs arrayed waveguide LED with different QD heights2013

    • Author(s)
      S. Yoshikawa, M. Yamauchi, Y. Yamamoto, and K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: 10 Issue: 11 Pages: 1438-1441

    • DOI

      10.1002/pssc.201300226

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate2013

    • Author(s)
      K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: 10 Issue: 11 Pages: 1357-1360

    • DOI

      10.1002/pssc.201300227

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Extremely improved InP template and GaInAsP system growth on directly- bonded InP/SiO2-Si and InP/glass substrate2013

    • Author(s)
      K. Matsumoto, T. Makino, K. Kimura, K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: 10 Issue: 5 Pages: 782-785

    • DOI

      10.1002/pssc.201200592

    • Related Report
      2013 Annual Research Report 2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Au-assisted growth of InAs nanowires on GaAs(111)B, GaAs(100), InP(111)B, InP(100) by MOVPE2013

    • Author(s)
      S. Murakami , H. Funayama , K. Shimomura and T. Waho
    • Journal Title

      Phys. Staus Solidi C

      Volume: 10 Issue: 5 Pages: 761-764

    • DOI

      10.1002/pssc.201200593

    • Related Report
      2013 Annual Research Report 2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate2013

    • Author(s)
      K. Matsumoto, T. Makino, K. Kimura, and K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: 10 Pages: 133-135

    • DOI

      10.1016/j.jcrysgro.2012.09.063

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate2013

    • Author(s)
      K. Matsumoto, T. Makino, K. Kimura, K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: 370 Pages: 133-135

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Flat-topped emission with spectral width above 500 nm from InAs/InP QD waveguide array light-emitting diode2012

    • Author(s)
      S.Yoshikawa, T.Saegusa, Y.Iwane, M.Yamauchi, K.Shimomura
    • Journal Title

      Applied Physics Express

      Volume: Vol.5 Pages: 92103-92103

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Switching characteristics in variable index arrayed waveguides using thin film heater2012

    • Author(s)
      S. Yanagi, Y. Murakami, Y. Yamazaki, K.Shimomura
    • Journal Title

      IEICE Trans. Electron.

      Volume: vol.E95-C, no. 7 Pages: 1265-1271

    • NAID

      10031023386

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Numerical calculation of wavelength demultiplexd light switching using variable index arrayed waveguide2012

    • Author(s)
      T. Makino, T. Tanimura, S. Yanagi, K. Shimomura
    • Journal Title

      IEICE Trans. Electron.

      Volume: vol.E95-C, no. 7 Pages: 1258-1264

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer2012

    • Author(s)
      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: vol.9, no.2 Pages: 210-213

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Flat-topped emission with spectral width above 500 nm from InAs/InP QD waveguide array light-emitting diode2012

    • Author(s)
      S. Yoshikawa, T. Saegusa, Y. Iwane, M. Yamauchi and K. Shimomura
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 9 Pages: 092103-092103

    • DOI

      10.1143/apex.5.092103

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Switching characteristics in variable index arrayed waveguides using thin film heater2012

    • Author(s)
      S. Yanagi, Y. Murakami, Y. Yamazaki and K. Shimomura
    • Journal Title

      IEICE Trans. Electron.

      Volume: E95-C Pages: 1265-1271

    • NAID

      10031023386

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Numerical calculation of wavelength demultiplexd light switching using variable index arrayed waveguide2012

    • Author(s)
      T. Makino, T. Tanimura, S. Yanagi, and K. Shimomura
    • Journal Title

      IEICE Trans. Electron.

      Volume: E95-C Pages: 1258-1264

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer2012

    • Author(s)
      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, and K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: 9 Pages: 210-213

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Journal Article] Selective MOVPE growth of InAs QDs using double-cap procedure2011

    • Author(s)
      F. Kawashima, R. Kobie, Y. Suzuki, K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: Vol.318 Pages: 1109-1112

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Selective MOVPE growth of InAs QDs using double-cap procedure2011

    • Author(s)
      F. Kawashima, R. Kobie, Y. Suzuki, and K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: 318 Pages: 1109-1112

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Presentation] nAs積層量子ドットLEDにおける各層のピーク波長制御による広帯域化2014

    • Author(s)
      鋤柄俊樹, 吉川翔平, 山内雅之, 山元雄太, 下村和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(17p-PA2-3)
    • Year and Date
      2014-03-17
    • Related Report
      2013 Final Research Report
  • [Presentation] InAs積層量子ドットLEDの注入電流に対する各層の発光特性の評価2013

    • Author(s)
      吉川翔平, 山内雅之, 山元雄太, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学(19a-P2-2)
    • Year and Date
      2013-09-19
    • Related Report
      2013 Final Research Report
  • [Presentation] Broadband and flat-topped spectrum of InAs/InP QDs arrayed waveguide LED2013

    • Author(s)
      S. Yoshikawa, T. Saegusa, Y. Iwane, M. Yamauchi, K.Shimomura
    • Organizer
      40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe, Japan(TuC1-6)
    • Year and Date
      2013-05-21
    • Related Report
      2013 Final Research Report
  • [Presentation] Wide energy level control of InAs QDs using double-capping procedure by MOVPE2013

    • Author(s)
      M. Yamauchi, Y. Iwane, S. Yoshikawa, Y. Yamamoto, K. Shimomura
    • Organizer
      25th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Kobe, Japan(MoPI-5)
    • Year and Date
      2013-05-20
    • Related Report
      2013 Final Research Report
  • [Presentation] 選択成長およびダブルキャップ法を用いたInAs量子ドットアレイLEDのフラットトップスペクトル2013

    • Author(s)
      吉川翔平, 三枝知充, 岩根優人, 山内雅之, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(29p-B4-9)
    • Year and Date
      2013-03-29
    • Related Report
      2013 Final Research Report
  • [Presentation] 選択成長およびダブルキャップ法を用いたInAs量子ドットアレイLEDのPL特性2012

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学(13a-PA8-4)
    • Year and Date
      2012-09-13
    • Related Report
      2013 Final Research Report
  • [Presentation] MOVPE選択成長およびダブルキャップ法を用いたアレイ導波路型InAs量子ドットLEDのスペクトル特性2012

    • Author(s)
      吉川翔平, 三枝知充, 岩根優人, 下村和彦
    • Organizer
      2012年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学(C-4-26)
    • Year and Date
      2012-09-12
    • Related Report
      2013 Final Research Report
  • [Presentation] V/III ratio of Ga0.7In0.3As buffer layer dependence on InAs/InP QDs structure2012

    • Author(s)
      Y.Iwane, T. Saegusa, K. Yoshida, M. Yamauchi, S.Yoshikawa, K. Shimomura
    • Organizer
      16th International Conferenece on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea(WeP049)
    • Year and Date
      2012-05-23
    • Related Report
      2013 Final Research Report
  • [Presentation] 3層InAs量子ドットアレイLEDのELスペクトルの解析2012

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(17p-GP12-5)
    • Year and Date
      2012-03-17
    • Related Report
      2013 Final Research Report
  • [Presentation] Broadband QDs array LED using selective MOVPE growth2011

    • Author(s)
      K. Shimomura
    • Organizer
      BIT's 1st Annual World Congress of Nano-S&T
    • Place of Presentation
      Dalian, China
    • Year and Date
      2011-10-23
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Random switching of wavelength demultiplexed light in variable arrayed waveguide2011

    • Author(s)
      T. Makino, T. Tanimura, S. Yanagi, K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference
    • Place of Presentation
      Kaohsiung, Taiwan(7P3_097)
    • Year and Date
      2011-07-07
    • Related Report
      2013 Final Research Report
  • [Presentation] Switching characteristics in variable index arrayed waveguides using triangular heater2011

    • Author(s)
      S. Yanagi, Y. Murakami, T. Aoyagi, Y. Yamazaki K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference
    • Place of Presentation
      Kaohsiung, Taiwan(7E2_3)
    • Year and Date
      2011-07-07
    • Related Report
      2013 Final Research Report
  • [Presentation] Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structure2011

    • Author(s)
      M. Hirooka, F. Kawashima, Y.Iwane, T.Saegusa, K. Shimomura
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-24
    • Related Report
      2013 Final Research Report
  • [Presentation] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer2011

    • Author(s)
      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, K. Shimomura
    • Organizer
      38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-23
    • Related Report
      2013 Final Research Report
  • [Presentation] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer2011

    • Author(s)
      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, and K. Shimomura
    • Organizer
      38th International Symposium on Compound Semiconductors (ISCS 2011)
    • Place of Presentation
      Berlin, Germany
    • Related Report
      2011 Research-status Report
  • [Presentation] Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structure2011

    • Author(s)
      M. Hirooka, F. Kawashima, Y.Iwane, T.Saegusa, and K. Shimomura
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011)
    • Place of Presentation
      Berlin, Germany
    • Related Report
      2011 Research-status Report
  • [Presentation] Switching characteristics in variable index arrayed waveguides using triangular heater2011

    • Author(s)
      S. Yanagi, Y. Murakami, T. Aoyagi, Y. Yamazaki and K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference (OECC2011)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Related Report
      2011 Research-status Report
  • [Presentation] Random switching of wavelength demultiplexed light in variable arrayed waveguide2011

    • Author(s)
      T. Makino, T. Tanimura, S. Yanagi, and K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference (OECC2011)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Related Report
      2011 Research-status Report
  • [Presentation] Wavelength demultiplexing and carrier induced switching in variable index arrayed waveguides2011

    • Author(s)
      T. Aoyagi, T. Tanimura, S. Yanagi, Y. Yamazaki and K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference (OECC2011)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Related Report
      2011 Research-status Report
  • [Presentation] Field-Assisted Self-Assembly of InAs Naonwires on Si substrate2011

    • Author(s)
      E. Takashima, H. Funayama, T. Waho, K. Shimomura, and W. Prost
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM 2011)
    • Place of Presentation
      Gifu, Japan
    • Related Report
      2011 Research-status Report
  • [Presentation] Broadband QDs array LED using selective MOVPE growth2011

    • Author(s)
      K. Shimomura
    • Organizer
      BIT's 1st Annual World Congress of Nano-S&T(招待講演)
    • Place of Presentation
      Dalian, China
    • Related Report
      2011 Research-status Report
  • [Presentation] Broadband and flat-topped spectrum of InAs/InP QDs arrayed waveguide LED

    • Author(s)
      S. Yoshikawa, T. Saegusa, Y. Iwane, M. Yamauchi, and K. Shimomura
    • Organizer
      40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Wide energy level control of InAs QDs using double-capping procedure by MOVPE

    • Author(s)
      M. Yamauchi, Y. Iwane, S. Yoshikawa, Y. Yamamoto, and K. Shimomura
    • Organizer
      25th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate

    • Author(s)
      K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura
    • Organizer
      Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] MOVPE growth of InAs/InP QDs on directlybonded InP/Si substrate

    • Author(s)
      K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura
    • Organizer
      25th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] 3元,4元キャップ層によるInAs/InP量子ドットの長波長発光

    • Author(s)
      山元雄太, 山内雅之, 吉川翔平, 鋤柄俊樹, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Related Report
      2013 Annual Research Report
  • [Presentation] MOVPEによるGa間欠供給GaInAs量子ドットの発光特性

    • Author(s)
      山内雅之, 吉川翔平, 山元雄太, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Related Report
      2013 Annual Research Report
  • [Presentation] InAs積層量子ドットLEDの注入電流に対する各層の発光特性の評価

    • Author(s)
      吉川翔平, 山内雅之, 山元雄太, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Related Report
      2013 Annual Research Report
  • [Presentation] InAs積層量子ドットLEDにおける各層のピーク波長制御による広帯域化

    • Author(s)
      鋤柄俊樹, 吉川翔平, 山内雅之, 山元雄太, 下村和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] p-変調ドープInAs/InP量子ドット構造のEL特性

    • Author(s)
      山元 雄太, 山内 雅之, 吉川 翔平, 下村 和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] 直接貼付InP/GaAs基板上GaInAsP系MOVPE成長

    • Author(s)
      金谷佳則, 松本恵一, 小冷亮太, 岸川純也, 下村和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] 直接貼付InP/Si基板上InAs積層量子ドット構造

    • Author(s)
      岸川純也, 松本恵一, Zhang Xinxin, 金谷佳則, 下村和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] 自己触媒VLS法によるInPナノワイヤの成長温度依存性

    • Author(s)
      荻野雄大, 山内雅之, 山元雄太, 下村和彦, 和保孝夫
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] Si基板上直接貼付InP層の平坦性向上

    • Author(s)
      松本恵一, 小冷亮太,岸川純也, 下村和彦,
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] GaInAsP系結晶再成長のための直接貼付InP/Si基板接合界面における電気特性評価

    • Author(s)
      金谷佳則, 松本恵一, Zhang Xinxin, 下村和彦,
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Related Report
      2013 Annual Research Report
  • [Presentation] 直接貼付InP/Si基板上GaInAs/InP MQW構造選択MOVPEにおけるPL波長シフト

    • Author(s)
      松本恵一, Zhang Xinxin, 金谷佳則, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Related Report
      2013 Annual Research Report
  • [Presentation] 直接貼付InPテンプレートを用いた異種基板上MOVPE結晶成長

    • Author(s)
      松本 恵一, 張 きんきん, 金谷 佳則, 下村 和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館,東京
    • Related Report
      2013 Annual Research Report
  • [Presentation] GaInAsP system growth on InP/SiO2-Si and SiO2 templates fabricated by direct wafer bonding

    • Author(s)
      K. Matsumoto , T. Makino , K. Kimura and K. Shimomura
    • Organizer
      39th International Symposium on Compound Semiconductors
    • Place of Presentation
      Santa Barbara, CA, USA
    • Related Report
      2012 Research-status Report
  • [Presentation] Au-assisted growth of InAs nanowires on GaAs(111)B,GaAs(100),InP(111)B,InP(100) by MOVPE

    • Author(s)
      S. Murakami , A. Funayama , K. Shimomura and T. Waho
    • Organizer
      39th International Symposium on Compound Semiconductors
    • Place of Presentation
      Santa Barbara, CA, USA
    • Related Report
      2012 Research-status Report
  • [Presentation] V/III ratio of Ga0.7In0.3As buffer layer dependence on InAs/InP QDs structure

    • Author(s)
      Y.Iwane, T.Saegusa, K.Yoshida, M.Yamauchi, S.Yoshikawa, and K.Shimomura
    • Organizer
      16th International Conferenece on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
    • Place of Presentation
      Busan, Korea
    • Related Report
      2012 Research-status Report
  • [Presentation] GaInAs/InP MOVPE growth on directly bonded InP/Si substrate

    • Author(s)
      K. Matsumoto, T. Makino, K. Kimura, and K. Shimomura
    • Organizer
      16th International Conferenece on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
    • Place of Presentation
      Busan, Korea
    • Related Report
      2012 Research-status Report
  • [Presentation] 直接貼付InP/glass 基板上におけるGaInAs/InP 層のMOVPE 結晶成長

    • Author(s)
      松本恵一, Xinxin Zhang, 金谷佳則, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Research-status Report
  • [Presentation] MOVPE による低テーパを目指したInAs ナノワイヤのVLS 成長

    • Author(s)
      山内雅之, 村上新, 松本恵一, 船山裕晃, 下村和彦, 和保孝夫
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 直接貼付InP/Si基板上へのGa0.2In0.8As量子ドット成長

    • Author(s)
      Xinxin Zhang, 松本恵一, 金谷佳則, 山内雅之, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Research-status Report
  • [Presentation] InAs 供給量増加によるInAs/InP ダブルキャップ量子ドットの長波長発光

    • Author(s)
      山元雄太, 岩根優人, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 選択成長およびダブルキャップ法を用いたInAs量子ドットアレイLEDのフラットトップスペクトル

    • Author(s)
      吉川翔平, 三枝知充, 岩根優人, 山内雅之, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 選択成長およびダブルキャップ法を用いたInAs量子ドットアレイLEDのPL特性

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 直接貼付InP/SiO2-Si基板上におけるMOVPE結晶成長表面の面粗さ測定

    • Author(s)
      松本恵一, 牧野辰則, 喜村勝矢, 下村和彦
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Research-status Report
  • [Presentation] ファーストキャップ層厚変化によるInAs/InPダブルキャップ量子ドットの長波長発光

    • Author(s)
      岩根優人, 三枝知充, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Research-status Report
  • [Presentation] Au微粒子を用いたGaAs(111)B基板上InAsナノワイヤのV/III比依存性

    • Author(s)
      村上新, 船山裕晃, 下村和彦, 和保孝夫
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Research-status Report
  • [Presentation] MOVPE選択成長およびダブルキャップ法を用いたアレイ導波路型InAs量子ドットLEDのスペクトル特性

    • Author(s)
      吉川翔平, 三枝知充, 岩根優人, 下村和彦
    • Organizer
      2012年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 電界効果GaInAs/InP MQWアレイ導波路型波長スイッチの動作特性と解析

    • Author(s)
      柳智史, 吉岡政洋, 下村和彦
    • Organizer
      2012年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 選択成長InAs量子ドットアレイLEDのスペクトル解析

    • Author(s)
      山内雅之,三枝知充,岩根優人, 吉川翔平, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館、東京
    • Related Report
      2012 Research-status Report
  • [Presentation] 電界効果GaInAs/InP MQW波長スイッチの2ポート間スイッチング特性

    • Author(s)
      柳智史,青柳孝典,谷村昂,下村和彦
    • Organizer
      第71回応用物理学学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Research-status Report
  • [Presentation] 選択成長3層InAs量子ドットアレイLEDのPLスペクトルの解析

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第71回応用物理学学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Research-status Report
  • [Presentation] ヒーター長変化によるGaInAs/InP MQW波長光スイッチのスイッチング特性

    • Author(s)
      山崎勇輝, 村上洋介, 下村和彦
    • Organizer
      第71回応用物理学学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Research-status Report
  • [Presentation] GaAs(111)B,GaAs(100),InP(111)B,InP(100)基板におけるAu微粒子を用いたInAsナノワイヤ成長

    • Author(s)
      村上 新,船山 裕晃,下村 和彦,和保 孝夫
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Research-status Report
  • [Presentation] 3層InAs量子ドットアレイLEDのELスペクトルの解析

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Research-status Report
  • [Presentation] GaInAs/InP MQW選択成長アレイ導波路のキャリア注入時の屈折率変化量

    • Author(s)
      青柳 孝典,吉岡 政洋,柳 智史, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Research-status Report
  • [Presentation] 直接貼付InP/Si基板上におけるGaInAs/InP系MOVPE結晶成長

    • Author(s)
      松本恵一,牧野辰則,喜村勝矢, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Research-status Report
  • [Presentation] Ga0.9In0.1Asバッファ層を用いたInAs/InP量子ドットの発光特性

    • Author(s)
      岩根優人, 三枝知充, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Research-status Report
  • [Presentation] 電界効果GaInAs/InP MQW波長スイッチの電極構造改善

    • Author(s)
      柳 智史,青柳 孝典,谷村 昂,下村 和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Research-status Report
  • [Book] 「量子ドットエレクトロニクスの最前線」第2章第5節分担2011

    • Author(s)
      下村和彦
    • Publisher
      株式会社エヌ・ティー・エス
    • Related Report
      2013 Final Research Report
  • [Remarks] ホームページ

    • URL

      http://pweb.cc.sophia.ac.jp/shimolab/

    • Related Report
      2013 Final Research Report
  • [Remarks] 上智大学下村研究室

    • URL

      http://pweb.cc.sophia.ac.jp/shimolab/

    • Related Report
      2012 Research-status Report
  • [Remarks] 上智大学下村研究室

    • URL

      http://pic.ee.sophia.ac.jp

    • Related Report
      2012 Research-status Report

URL: 

Published: 2011-08-05   Modified: 2019-07-29  

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