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Stabilization of SRAM according to fluctuation of transistor characteristics

Research Project

Project/Area Number 23560423
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionOsaka Institute of Technology

Principal Investigator

MAKINO Hiroshi  大阪工業大学, 情報科学部, 教授 (50454038)

Project Period (FY) 2011 – 2013
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords電子デバイス / 集積回路 / SRAM / しきい値電圧 / ばらつき / 動作安定化 / スピードセンサ / 電圧発生器 / しきい値 / 電圧 / リングオシレータ / 書き込み / 読み出し
Research Abstract

Against the problem that the SRAM fails to function because of the fluctuation of the threshold voltage of transistors, a method of securing SRAM is established. This method consists of two steps, firstly detecting the processed threshold voltage, and next, giving the optimum supply voltage to the SRAM according to the detected threshold voltage. This method enables to secure SRAMs which do not operate under the standard condition. To realize the method, a new detecting technique of the processed threshold voltage is proposed and the table showing the relation between the threshold voltage and the optimum supply voltage is developed. Finally, the whole SRAM circuit is designed and simulated. The simulation result shows that the proposed method is effective to improve the operation yield of SRAM.

Report

(4 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Research-status Report
  • 2011 Research-status Report
  • Research Products

    (21 results)

All 2014 2013 2012 2011

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (14 results) Book (1 results)

  • [Journal Article] ANALYSIS OF VOLTAGE, CURRENT AND ENERGY DISSIPATION OF STEPWISE ADIABATIC CHARGING OF A CAPACITOR USING A NONRESONANT INDUCTOR CURRENT2014

    • Author(s)
      Shunji Nakata, Hiroshi Makino, Ryota Honda, Masayuki Miyama, and Yoshio Matsuda
    • Journal Title

      Journal of Circuits, Systems, and Computers

      Volume: Volume 23, No. 3 Issue: 03 Pages: 1450039-1450039

    • DOI

      10.1142/s021812661450039x

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Increase in Read Noise Margin of Single-bit-line SRAM using Adiabatic Change of Word Line Voltage2014

    • Author(s)
      Shunji Nakata, Hiroki Hanazono, Hiroshi Makino, Hiroki Morimura, Masayuki Miyama, and Yoshio Matsuda
    • Journal Title

      IEEE Transactions on Very Large Scale Integration (VLSI) Systems

      Volume: Volume 22, Issue 3 Issue: 3 Pages: 686-690

    • DOI

      10.1109/tvlsi.2013.2247642

    • Related Report
      2013 Annual Research Report 2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Improved Evaluation Method for the SRAM Cell Write Margin by Word Line Voltage Acceleration2012

    • Author(s)
      Hiroshi Makino, Naoya Okada, Tetsuya Matsumura, Koji Nii, Tsutomu Yoshimura, Shuhei Iwade and Yoshio Matsuda
    • Journal Title

      Circuits and Systems in Online Journal of Scientific Research Publishing (SCIRP)

      Volume: Volume 3, No. 3 Issue: 03 Pages: 242-251

    • DOI

      10.4236/cs.2012.33034

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Utilising the normal distribution of the write noise margin to easily predict the SRAM write yield2012

    • Author(s)
      Hiroshi Makino, Shunji Nakata, Hirotsugu Suzuki, Shin’ichiro Mutoh, Masayuki Miyama, Tsutomu Yoshimura, Shuhei Iwade and Yoshio Matsuda
    • Journal Title

      IET Circuits, Devices & Systems

      Volume: Volume 6, Issue 4 Issue: 4 Pages: 260-270

    • DOI

      10.1049/iet-cds.2012.0090

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] General Stability of Stepwise Waveform of an Adiabatic Charge Recycling Circuit With Any Circuit Topology2012

    • Author(s)
      Shunji Nakata, Ryota Honda, Hiroshi Makino, Shin’ichiro Mutoh, Masayuki Miyama and Yoshio Matsuda
    • Journal Title

      IEEE Transactions on Circuits and Systems-I:Regular Papers

      Volume: Volume 59, Issue 10 Issue: 10 Pages: 2301-2314

    • DOI

      10.1109/tcsi.2012.2189054

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Reexamination of SRAM Cell Write Margin Definitions in view of Predicting the Distribution2011

    • Author(s)
      H. Makino, S. Nakata, H. Suzuki, S. Mutoh, M. Miyama, T. Yoshimura, S. Iwade, and Y. Matsuda
    • Journal Title

      IEEE Transactions on Circuits and Systems-II Express Briefs

      Volume: Volume 58, Issue 4 Issue: 4 Pages: 230-234

    • DOI

      10.1109/tcsii.2011.2124531

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Presentation] Estimation of Threshold Voltage from Frequency of Ring Oscillator2014

    • Author(s)
      Takuya Matsumoto, Hroshi Makino, Tsutomu Yoshimura, Shuhei Iwade, Yoshio Matsuda
    • Organizer
      IEEE The 2014 International Meeting for Future of Electron Devices, Kansai(IMFEDK2014)
    • Place of Presentation
      Ryukoku University Avanti Kyoto Hall, Kyoto(to be presented at)
    • Related Report
      2013 Final Research Report
  • [Presentation] Estimation of Threshold Voltage from Frequency of Ring Oscillator2014

    • Author(s)
      Takuya Matsumoto, Hroshi Makino, Tsutomu Yoshimura, Shuhei Iwade, and Yoshio Matsuda
    • Organizer
      IEEE The 2014 International Meeting for Future of Electron Devices, Kansai(IMFEDK2014)
    • Place of Presentation
      Ryukoku University
    • Related Report
      2013 Annual Research Report
  • [Presentation] 2013年度電気関係学会関西連合大会2013

    • Author(s)
      松本拓也, 大東士朗, 牧野博之, 吉村勉, 岩出秀平, 松田吉雄
    • Organizer
      トランジスタの閾値電圧検知手法の提案
    • Place of Presentation
      大阪電気通信大学(G9-0025)
    • Related Report
      2013 Final Research Report
  • [Presentation] Expansion of SRAM Operation Margin by Adaptive Voltage Supply2013

    • Author(s)
      Kyohei Kishida, Tomohiro Tsujii, Hroshi Makino, Tsutomu Yoshimura, Shuhei Iwade, Yoshio Matsuda
    • Organizer
      Proceedings of IEEE The 2013 International Meeting for Future of Electron Devices, Kansai(IMFEDK2013)
    • Place of Presentation
      Kansai University, Osaka
    • Related Report
      2013 Final Research Report
  • [Presentation] Expansion of SRAM Operation Margin by Adaptive Voltage Supply2013

    • Author(s)
      Kyohei Kishida, Tomohiro Tsujii, Hroshi Makino, Tsutomu Yoshimura, Shuhei Iwade, and Yoshio Matsuda
    • Organizer
      IEEE The 2013 International Meeting for Future of Electron Devices, Kansai(IMFEDK2013)
    • Place of Presentation
      Kansai University
    • Related Report
      2013 Annual Research Report
  • [Presentation] エネルギー散逸のないステップ電圧生成回路を用いたキャパシタの高効率充電2013

    • Author(s)
      細川 淳平、中田 俊司、牧野 博之、吉村 勉、岩出 秀平、深山 正幸、松田 吉雄
    • Organizer
      2013年度電気関係学会北陸支部連合大会
    • Place of Presentation
      金沢大学
    • Related Report
      2013 Annual Research Report
  • [Presentation] トランジスタの閾値電圧検知手法の提案2013

    • Author(s)
      松本 拓也、大東 士朗、牧野 博之、吉村 勉、岩出 秀平、松田 吉雄
    • Organizer
      2013年度電気関係学会関西連合大会
    • Place of Presentation
      大阪電気通信大学
    • Related Report
      2013 Annual Research Report
  • [Presentation] ばらつきを考慮したSRAMメモリセルの動作範囲拡大の検討2012

    • Author(s)
      岸田京平, 牧野博之, 吉村勉, 岩出秀平, 松田吉雄
    • Organizer
      2012年電気関係学会関西連合大会
    • Place of Presentation
      関西大学(9pmD-27)
    • Related Report
      2013 Final Research Report
  • [Presentation] Energy Dissipation Reduction during Adiabatic Charging and Discharging with Controlled Inductor Current2012

    • Author(s)
      Shunji. Nakata, Ryota Honda., Hiroshi. Makino, Hiroki. Morimura, and Yoshio. Matsuda
    • Organizer
      IEEE International Midwest Symposium on Circuits and Systems 2012 (MWSCAS)
    • Place of Presentation
      Boise, Idaho, USA
    • Related Report
      2012 Research-status Report
  • [Presentation] WL 電圧シフトによる 電圧シフトによる書込みマージンの加速評価法2012

    • Author(s)
      岡田 尚也、牧野 博之、中田 俊司、吉村 勉、岩出 秀平、深山 正幸、松田 吉雄
    • Organizer
      2012年度電気関係学会北陸支部連合大会
    • Place of Presentation
      富山県立大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 断熱充電回路を用いた高効率エネルギー蓄電技術の開発2012

    • Author(s)
      中田 俊司、本田 良太、牧野 博之、深山 正幸、松田 吉雄
    • Organizer
      2012年度電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学
    • Related Report
      2012 Research-status Report
  • [Presentation] ばらつきを考慮したSRAMメモリセルの動作範囲拡大の検討2012

    • Author(s)
      岸田 京平、牧野 博之、吉村 勉、岩出 秀平、松田 吉雄
    • Organizer
      2012年電気関係学会関西連合大会
    • Place of Presentation
      関西大学
    • Related Report
      2012 Research-status Report
  • [Presentation] Increasing Static Noise Margin of Single-bit-line SRAM by Lowering Bit-line Voltage during Reading2011

    • Author(s)
      S. Nakata, H. Suzuki, H. Makino, S. Mutoh, M. Miyama, and Y. Matsuda
    • Organizer
      IEEE International Midwest Symposium on Circuits and Systems 2011 (MECAS)
    • Place of Presentation
      Yonsei University, Seoul, Korea
    • Related Report
      2011 Research-status Report
  • [Presentation] Accelerated Evaluation Method for the SRAM Cell Write Margin using Word Line Voltage Shift2011

    • Author(s)
      H. Makino, Shunji Nakata, H. Suzuki, H. Morimura, S. Mutoh, M. Miyama, T. Yoshimura, S. Iwade, and Y. Matsuda
    • Organizer
      IEEE International Symposium on Integrated Circuits 2011 (ISIC)
    • Place of Presentation
      Suntec International Convention and Exhibition Centre, Singapore
    • Related Report
      2011 Research-status Report
  • [Book] 半導体LSI技術2012

    • Author(s)
      牧野博之、益子洋治、山本秀和
    • Total Pages
      287
    • Publisher
      共立出版
    • Related Report
      2011 Research-status Report

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Published: 2011-08-05   Modified: 2019-07-29  

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