| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥260,000 (Direct Cost: ¥200,000、Indirect Cost: ¥60,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
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| Research Abstract |
Removal of fine particles adhering to the surfaces of semiconductor device components is a key process for the semiconductor industry. The purpose of this study is to develop a new method for removing such particles using electrostatic force. An upper silicon electrode and a dielectric film of a material such as polyethylene or polyvinylchloride were placed on a lower Si electrode, to which glass spheres with diameters greater than 2 um were adhered, and a high voltage was applied to the two Si electrodes for 60 s. The glass spheres were adhered to the dielectric film and were removed from the Si substrate. The removal process was repeated several times, and a high removal rate of about 80% was obtained after the fifth iteration.
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