| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Research Abstract |
Electric field measurement sensor based on the modulated scattering technique with optically modulated scatterer had developed. A semiconductor is used as the scatterer, and illumination of the semiconductor with photons of energy larger than the band-gap energy of the scatterer, the scattering cross section can modulate. Undoped germanium
is used as the optically modulated scatterer, time response of the detection is ten times faster than the previously developed dielectric scatterer system. This sensor obtained almost the same sensitivity of optical electric field sensor with metallic dipole elements in microwave region. This sensor can measure the direction, amplitude, and phase of electric field and can change the spatial resolution with varying the diameter of illuminated light.
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