| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Research Abstract |
Silicon-based thermoelectric materials with fine microstructure were obtained by metallurgical methods, and their thermoelectric properties were examined. In the CoSi, Co-rich CoSi supersaturated solid solution was heat treated so as to precipitate Co2Si phase. The specimen exhibited larger Seebeck coefficient than single phase of CoSi. It appears that CoSi/Co2Si boundary contribute to the improvement of the Seebeck coefficient. For the Mg2Si, Mg2Si-Si that has fine eutectic microstructure showed reduced thermal conductivity. Additionally, a possibility that crystal strain at Mg2Si/Si boundary affects the Seebeck coefficient was found. As for the b-FeSi2, fine Si phase was precipitated in the b-FeSi2 phase though the eutectoid reaction from a-FeSi2 phase. The Si-precipitated b-FeSi2 was obtained within shorter annealing time (4h) compared to the single-phase (100h), while thermoelectric properties of the obtained specimen were comparable to those of the single-phase b-FeSi2.
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