Development of measurement method and engineering of Ge/Si interfacial thermal conductance
| Project/Area Number |
23560813
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
XU Yibin 独立行政法人物質・材料研究機構, ハイブリット材料ユニット, 主幹研究員 (30354244)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 界面 / 熱伝導 / 周波数領域法 / 分子動力学シミュレーション / フォノン状態密度 / フォノン緩和時間 / 拡散 / 結晶欠陥 |
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| Research Abstract |
A measurement method of interfacial thermal resistance for semiconductor/semiconductor interface has been developed. Molecular dynamics simulation has been performed on Si/Ge interface, including interfaces with vacancies and atomic diffusion. The phonon DOS and relaxation time at the interfacial region, and the interfacial thermal resistance have been calculated. The shift of phonon DOS, frequency dependence of phonon relaxation time and their effects on interfacial thermal resistance have been analyzed. Out-of-plane thermal conductivity of sputtered amorphous and polycrystalline Ge(Si) thin films and Si/Ge interfacial thermal resistance have been measured. The Si/Ge interfacial thermal resistance is found strongly dependent on the crystalline state and roughness of the interface.
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Report
(4 results)
Research Products
(55 results)
