| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Research Abstract |
In this work, a conductive quantum wire was fabricated by using high-temperature segregation behavior of a metallic dopant along a dislocation core in an insulating MgO bicrystal grain boundary (GB) and then was characterized by a scanning TEM (STEM) and a first-principle calculation. The STEM image and electron energy loss spectrum (EELS) mapping showed that a structure unit in the MgO GB is formed to compensate lattice mismatch and calcium (Ca) and titanium (Ti) impurities are strongly localized in the GB. The first-principle calculation revealed that the segregated Ti atoms form conductive channels along the GB suggesting semi-conductor like behavior. By using self-segregation behavior along a dislocation core, we demonstrated to fabricate a low dimensional quantum structure with a specific electronic property in an insulating solid crystal.
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