| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
We studied improve of a thermoelectric performance for Ba-Ga-Sn clathrate semiconductors with nano-size caged structure. The Sn-based clathrates have high abilities as high performance thermoelectric materials, in spits of a random structure of Ga and Sn in the host lattice. Therefore it is expected that transport properties are robust for additional element doping in Ba-Ga-Sn. In this study we tried to enhance the mobility of carrier by atomic doping to host sites or guest sites. In theoretical approaches we calculated the electronic structure by an ab-initio method and calculated the thermoelectric properties by using calculated band structure. In the calculation of the thermoelectric properties the semi-classical theory was used by the Boltzmann equation. In the experimental researches, new materials were synthesized, and a thermoelectric power, an electrical conductivity, and a thermal conductivity were measured.
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