Charge separation of photo-excited electric charge carriers and its interaction with internal electric filed induced by crystalline polarity

• Project/Area Number: 23651081
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Environmental technology/Environmental materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: OHASHI Naoki 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 部門長 (60251617)
• Co-Investigator(Renkei-kenkyūsha): HANEDA Hajime 独立行政法人物質・材料研究機構, 企画部門, 部門長 (70354420) ; SAKAGUCHI Isao 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 主幹研究員 (20343866) ; ADACHI Yutaka 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 主任研究員 (30354418) ; HISHITA Shunichi 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, グループリーダー (40354419) ; OHGAKI Takeshi 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 主任研究員 (80408731)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: 酸化物半導体 / 極性表面 / 電子状態 / 極性結晶 / 自発分極 / 光電子分光

Research Abstract

Characterization of surface electronic structure of oxide crystal was investigated by means of x-ray photoelectron spectroscopy. The surface of specimen was well polished to obtain damage free surface by chemical mechanical polishing using colloidal silica nano-particles. As a result, we obtained the trace of specific electronic states originated in the polarity of crystal and identification of the electronic states by using density functional theory calculation has been done. Deposition of polarity controlled crystals was also demonstrated.

Research Products

• [Journal Article] Determination of Schottky barrier profile at Pt/SrTiO_3:Nb junction by x-ray photoemission (2012)
  • Author(s): N. Ohashi, H. Yoshikawa, Y. Yamashita, S. Ueda, J. Li, H. Okushi, K. Kobayashi and H. Haneda
  • Journal Title: Applied Physics Letters Volume: 101 Pages: 251911-251911
  • DOI: 10.1063/1.4772628
  • Peer Reviewed
• [Journal Article] Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy (2012)
  • Author(s): Yao, Y., Sekiguchi, T., Ohgaki, T., Adachi, Y., Ohashi, N.
  • Journal Title: Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan Volume: 120 (1407) Pages: 513-519
  • NAID: 130004480114
  • Peer Reviewed
• [Journal Article] An aqueous Solution Process and Subsequent UV Treatment for Highly Transparent Conductive ZnO films (2012)
  • Author(s): Hajime Wagata
  • Journal Title: Journal of Materials Chemistry Volume: 22 Pages: 20706-20712
  • DOI: 10.1039/c2jm33584k
  • Peer Reviewed
• [Journal Article] Oxygen Diffusion Phenomena and Hydrogen Incorporation in Reducing BaTiO$_{3}$ Ceramics Doped with Ho below Solubility Limit (2012)
  • Author(s): Sakaguchi, I., Watanabe, K., Hishita, S., Ohashi, N., Haneda, H.
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 (10) Pages: 101801-101801
  • DOI: 10.1143/jjap.51.101801
  • NAID: 150000105001
  • Peer Reviewed
• [Journal Article] Observation and simulation of hard χ ray photoelectron diffraction to determine polarity of polycrystalline zinc oxide films with rotation domains (2012)
  • Author(s): Jesse R. Williams
  • Journal Title: JOURNAL OF APPLIED PHYSICS Volume: 111 Pages: 33525-33525
  • DOI: 10.1063/1.3682088
  • NAID: 80022377100
  • Peer Reviewed
• [Journal Article] Polarity - dependent photoemission spectra of wurtzite-type zinc oxide (2012)
  • Author(s): J. Williams, H. Yoshikawa, S. Ueda, Y. Yamashita, K. Kobayashi, Y. Adachi, H. Haneda, T. Oogaki, H. Miyazaki, Takamasa Ishigaki, N. Ohash
  • Journal Title: APPLIED PHYSICS LETTERS Volume: 100 Pages: 51902-51902
  • DOI: 10.1063/1.3673553
  • Peer Reviewed
• [Journal Article] Photocatalytic Activity and Related Surface Properties of Transparent (2011)
  • Author(s): Hajime Wagata, Naoki Ohashi, Ken-ichi Katsumata, Kiyoshi Okada, Nobuhiro Matsushita
  • Journal Title: Photochemistry and Photobiology, Volume: 87 Pages: 1009-1015
  • DOI: 10.1111/j.1751-1097.2011.00964.x
  • Peer Reviewed
• [Journal Article] The effect of citric ion on the spin-sprayed ZnO films: IR and XPS study for the organic impurities (2011)
  • Author(s): Hajime Wagata, Naoki Ohashi, Ken-ichi Katsumata, Kiyoshi Okada, Nobuhiro Matsushita
  • Journal Title: Key Engineering Materials Volume: 485 Pages: 291-294
  • DOI: 10.4028/www.scientific.net/kem.485.291
  • Peer Reviewed
• [Journal Article] Planarization of zinc oxide surface and evaluation of processing damage (2011)
  • Author(s): Miyazaki, H., Adachi, Y., Sakaguchi, I., Ishigaki, T., Ohashi, N.
  • Journal Title: Key Engineering Materials Volume: 485 Pages: 215-218
  • Peer Reviewed
• [Journal Article] Polarity determination of wurtzite-type crystals using hard x-ray photoelectron diffraction (2011)
  • Author(s): J.Williams, et al
  • Journal Title: Surface Science Volume: 605 Pages: 1336-1340
  • DOI: 10.1016/j.susc.2011.04.036
  • Peer Reviewed
• [Presentation] 放射光硬X線光電子分光法によるPt/Nb:SrTiO3接合の電子状態評価 (2013)
  • Author(s): 大橋直樹, 廣瀬左京, 吉川英樹, 上田茂典, 古田朋大,渡邉賢, 李建永, 坂口勲
  • Organizer: 第60回 応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学,厚木市
• [Presentation] 放射光硬X線光電子分光法によるPt/Nb:SrTiO3接合の電子状態評価 (2013)
  • Author(s): 大橋直樹, 廣瀬左京, 吉川英樹, 上田茂典, 古田朋大, 渡邉賢, 李建永, 坂口勲
  • Organizer: 第60回 応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Invited
• [Presentation] セラミックスの物性と電荷補償 (2012)
  • Author(s): 大橋直樹
  • Organizer: 日本セラミックス協会関西支部第14回若手フォーラム
  • Place of Presentation: 大阪府立青少年海洋センター,大阪府泉南郡岬町
• [Presentation] Defects and charge compensation in wide bandgap semiconductors (2012)
  • Author(s): OHASHI Naoki, SAKAGUCHI Isao, WATANABE Ken, ADACHI Yutaka, TAKESHI OGAKI, HISHITA Shunichi, MIYAZAKI Hiroki, Jesse Willia, ISHIGAKI Takamasa
  • Organizer: Solid State Chemistry 2012 (Invited)
  • Place of Presentation: University of Pardubice, Pardubice,チェコ
• [Presentation] 酸化物の電荷補償と機能発現に関する研究 (2012)
  • Author(s): 大橋直樹
  • Organizer: 日本セラミックス協会2012年会
  • Place of Presentation: 京都大学,京都,日本(Japan)
• [Presentation] Defects and charge compensation in wide bandgap semiconductors (2012)
  • Author(s): N. Ohashi, I. Sakaguchi, K. Watanabe, Y. Adachi, T. Ohgaki, S. Hishita, H. Miyazaki, T. Ishigaki, H. Haneda
  • Organizer: Solid State Chemistry 2012
  • Place of Presentation: Pardubice, Czech
  • Invited
• [Presentation] 酸化物の電荷補償と機能発現に関する研究 (2012)
  • Author(s): 大橋直樹
  • Organizer: 日本セラミックス協会２０１２年会(招待講演)
  • Place of Presentation: 京都大学
• [Presentation] NIMS連携拠点 (2012)
  • Author(s): 大橋直樹
  • Organizer: 東工大元素戦略シンポジウム
  • Place of Presentation: 東京工業大学 すずかけ台キャンパス,横浜市,日本
  • Year and Date: 2012-10-01
• [Presentation] ウルツ鉱型半導体薄膜の極性判定とその制御 (2011)
  • Author(s): 大橋直樹, Jesse Williams, 安達裕, 吉川英樹, 山下良之, 上田茂典, 大垣武, 坂口勲, 菱田俊一, 小林啓介
  • Organizer: 日本金属学会2011年度秋期講演大会
  • Place of Presentation: 沖縄コンベンションセンターおよびカルチャーリゾートフェストーネ,宜野湾
• [Presentation] Electronic structure of oxide semiconductors and their related junction structures", Metal Oxide / Polymer Nanocomposites and Applications (2011)
  • Author(s): OHASHI Naoki
  • Organizer: Hungarian Academy of Sciences
  • Place of Presentation: ブダペスト,ハンガリー
• [Presentation] Electronic structure of oxide semiconductors and their related junction structures (2011)
  • Author(s): OHASHI Naoki
  • Organizer: bilateral cooperations between NIMS-MFA and LIOS-MFA(招待講演)
  • Place of Presentation: Budapest, Hungary