Fabrication of periodic array of silicide quantum dot in silicon substrate by metallic ion implantation
| Project/Area Number |
23651087
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanostructural science
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| Research Institution | Hokkaido University |
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Principal Investigator |
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| Project Period (FY) |
2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 表面 / 界面ナノ構造 / 量子構造 / ウェハ直接接合 / イオン注入 / らせん転位網 / ナノ粒子規則配列 |
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| Research Abstract |
Fabrication of periodic array of silicide quantum dots in silicon wafer were carried out by means of ion implantation and direct wafer bonding. It was clarified that nodes of the screw dislocation network act as the preferential nucleation sites for the precipitate in silicon. The periodic array of silicon dioxide quantum dots was successfully fabricated by present method. It was suggested that low-damage ion implantation technique is required to make the silicide quantum dot array, because the surface degradation strongly affect to the feasibility of wafer bonding.
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Report
(3 results)
Research Products
(2 results)
