| Project/Area Number |
23651144
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Research Collaborator |
TAKAHASHI Hirokazu 東北大学, 大学院・工学研究科, 博士後期課程
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2011: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 磁性 / 磁気抵抗効果 / スピントロニクス / 交換磁気異方性 / スピンバルブ |
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| Research Abstract |
In order to develop a multilayer material in which magnetic moments steeply change their direction within atomic-order thickness, current-perpendicular to plane (CPP) magnetoresistance thin-film devices, consisted of Co based ferromagnetic layer and Ru spacer layer, were fabricated with UHV-sputtering method, and their transport properties were investigated. The interfacial uncompensated spins of Mn-Ir/ ferromagnetic bilayerswere also investigated with changing the ferromagnetic material. As a result, the exchange interaction at the interface and crystal structure of the ferromagnet were found to be important for large exchange anisotropy.
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