| Project/Area Number |
23651146
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Nagoya University |
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Principal Investigator |
HONDA Yoshio 名古屋大学, 工学研究科, 助教 (60362274)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAGUCHI Masahito 名古屋大学, 大学院・工学研究科, 准教授 (20273261)
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| Co-Investigator(Renkei-kenkyūsha) |
AMANO Hiroshi 名古屋大学, 大学院・工学研究科, 教授 (60202694)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | MBE / 結晶成長 / 半導体超微細化 / 半導体物性 / 量子細線 / ナノワイヤ / InGaN / フォトルミネッセンス / STEM / 双晶 / LED |
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| Research Abstract |
We succeeded in growth of GaN nanowires (NWs) on trench wall of Si microstructure. In order to reduce adverse effects of a polarization electric fieldand buffer layers, we also succeeded in growth of InGaN NWs on Si substrate without any buffer layer. In contrast to GaN NWs, however, there are some twin boundaries in InGaN NWs. We investigated the relationship between the twin boundaries and the optical properties. Lastly, we attempted to grow GaN NWs on highly oriented pyrolytic graphite(HOPG) substrate in order to apply to future device, and we observed that GaN NWs grew on HOPG substrate.
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