Making of Dirac Fermion Systems using Semiconductor Superstructures
| Project/Area Number |
23654100
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Condensed matter physics I
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | メゾスコピック系 / 局在ディラック電子系 / ディラック電子 / 半導体超微細化 / 半導体バンド設計 / 量子輸送現象 / ディラック電子系 / 半導体超格子 / アンチドット格子 |
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| Research Abstract |
The purpose of this research was to realize the 2D massless Dirac fermion system in the semiconductor lateral superlattice structure. As the first step, we have tried to realize the2D Bloch electron system with the reconstructed mini-band structure. We prepared the GaAs/AlGaAs FET devices with the laterally modulated gate electrode. The array of holes are fabricated on the ZEP gate insulating layer with the typical period of 60-80nm. The experimental results have not shown the sign of the band-reconstruction. The randomness of the array is an issue in the feature.
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Report
(3 results)
Research Products
(23 results)
