Science of THz light source based on longitudinal phonon-plasmon coupled mode in nitride materials

• Project/Area Number: 23656010
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Chiba University
• Principal Investigator: ISHITANI Yoshihiro 千葉大学, 工学(系)研究科(研究院), 教授 (60291481)
• Project Period (FY): 2011 – 2013
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: 赤外光 / THz / 量子干渉 / LOフォノン / 界面分極 / フォノン / 半導体 / テラヘルツ波 / フォノンポラリトン / 界面モード / 半導体薄膜 / テラヘルツ / 電気双極子モーメント / 窒化物半導体 / ＬＯフォノン / プラズモン

Research Abstract

The purpose of this research is the proposal of the principle and structure of THz light source with the frequency of less than 30 THz. It was found that absorption of p-polarized light by GaN and AlN thin films with the thickness less than a wavelength was detected. Also s-polarized light was absorbed in the stripe-shaped mesa structure with the width of less than a wavelength. Fano-type quantum interference was observed for the system of two LO phonon modes vibrating in the same plane and one continuum of inter-valence band transition in p-GaInP films. These results suggest the possibility of the coherent THz light emission by LO phonon system based on electromagnetic induced transparency.

Research Products

• [Journal Article] Theoretical and experimental study of the optical absorption at longitudinal phonon or phonon-plasmon coupling mode ener gy : An example of GaN (2012)
  • Author(s): Y. Ishitani
  • Journal Title: J. Appl. Phys Volume: 112 Pages: 1-8
  • Peer Reviewed
• [Journal Article] Carrierr ecombinat ion processes in Mg-doped N-polar InN films (2012)
  • Author(s): D. Imai, Y . Ishitani, M. Fujiwara, X. Q. Wang, K. Kusakabe, and A. Yoshikawa
  • Journal Title: Physica Status Solidi Volume: B249 Pages: 472-475
  • Peer Reviewed
• [Journal Article] Electron and hole scattering in InN films investigated by infrared measurements (2012)
  • Author(s): Y . Ishitani, M. Fujiwara, D. Imai, K. Kusakabe, and A. Y oshikawa
  • Journal Title: Physica Status Solidi A Volume: 207 Pages: 56-64
  • Peer Reviewed
• [Journal Article] Theoretical and experimental study of the optical absorption at longitudinal phonon or phonon-plasmon coupling mode energy: An example of GaN (2012)
  • Author(s): Yoshihiro Ishitani
  • Journal Title: Journal of Applied Physics Volume: 112 Issue: 6
  • DOI: 10.1063/1.4754555
  • Peer Reviewed
• [Presentation] Carrierr ecombination dynamics of III-nitrides based on infrared spectroscopy (2014)
  • Author(s): Y . Ishitani
  • Organizer: AnalytiX
  • Place of Presentation: Dalian, China
  • Invited
• [Presentation] p 型 GaInP を用いた 2 種フォノンと連続準位の量子干渉効果 (2014)
  • Author(s): 坂本裕則, 石原一行, 馬蓓, 森田健, 石谷善博
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山大学
• [Presentation] InN の非輻射再結合速度決定機構におけるキャリア・フォノン輸送特性 (2014)
  • Author(s): 今井大地, 森田健, 塚原捷生, 馬 蓓, 石谷善博, 王 新強, 草部一秀, 吉川明彦
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山大学
• [Presentation] Carrier recombination dynamics of III-nitrides based on infrared spectroscopy (2014)
  • Author(s): Y.Ishitani and D.Imai
  • Organizer: AnalytiX2014
  • Place of Presentation: Dalian, China
  • Invited
• [Presentation] p 型GaInP を用いた2 種フォノンと連続準位の量子干渉効果 (2014)
  • Author(s): 坂本裕則，石原一行，馬ベイ，森田健，石谷善博
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
• [Presentation] Phonon polariton and infrared absorption effect s in III-nitride thin films (2013)
  • Author(s): K. Hatta and Y . Ishitani
  • Organizer: The 38th International Conference on Infrared, Millimeter and Terahertz Waves
  • Place of Presentation: Mainz, Germany
• [Presentation] III 族窒化物半導体における光子-フォノン相互作用 (2013)
  • Author(s): 八田佳祐, 石谷善博
  • Organizer: 日本分光学会テラヘルツ分光部会シンポジウムテラヘルツ分光法の最先端 VII~どこへ行くテラヘルツ分光~
  • Place of Presentation: 京都大学
• [Presentation] 窒化インジウムにおけるフォノン放出を伴う非輻射再結合 (2013)
  • Author(s): 今井大地, 石谷善博, 王新強, 吉川明彦
  • Organizer: 日本物理学会
  • Place of Presentation: 徳島大学
• [Presentation] InN のバンド端発光効率低減過程におけるフォノン輸送特性の影響 (2013)
  • Author(s): 今井大地, 石谷善博, 王新強, 吉川明彦
  • Organizer: 第74回秋季応用物理学会学術講演会
  • Place of Presentation: 同志社大学
• [Presentation] 窒化物半導体における光子-フォノン相互作用 (2013)
  • Author(s): 八田佳祐, 石谷善博
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] III族窒化物半導体における光子－フォノン相互作用 (2013)
  • Author(s): 八田佳祐,石谷善博
  • Organizer: 日本分光学会テラヘルツ分光部会シンポジウム
  • Place of Presentation: 京都大学
• [Presentation] Phonon polariton and infrared absorption effects in III-nitride thin films (2013)
  • Author(s): Keisuke Hatta and Yoshihiro Ishitani
  • Organizer: The 38th International Conference on Infrared, Millimeter and Terahertz Waves
  • Place of Presentation: Mainz, Germany
• [Presentation] InN のバンド端発光の低減におけるフォノン放出による非輻射性再結合過程 (2012)
  • Author(s): 石谷善博
  • Organizer: 第22回格子欠陥フォーラム・励起ナノプロセス研究会・理研シンポジウム合同シンポジウム
  • Place of Presentation: マホロバマインズ三浦
  • Year and Date: 2012-09-22
  • Invited
• [Presentation] Infrared measurement s in the study of III-nitrides (2012)
  • Author(s): Y. Ishitani
  • Organizer: Intensive Discussion on Growth of Nitride Semiconductor
  • Place of Presentation: Sendai, Japan
  • Invited
• [Presentation] Interface phonon polariton and infrared optical absorption in nitride thin films (2012)
  • Author(s): Y. Ishitani
  • Organizer: International Workshop on Nitride Semiconductors
  • Place of Presentation: Sapporo, Japan, oral
• [Presentation] Mid and Far -Infrared analysis of the local electron-lattice dynamics on carrier recombinat ion processes of InN films (2012)
  • Author(s): D. Imai, Y . Ishitani, M. Fujiwara, X. Wang, K. Kusakabe, and A. Y oshikawa
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: Sapporo, Japan, oral
• [Presentation] Effect s of Carrier Transport and Local Lattice Temperature on Nonr adiat ive Recombination processes in InN Films (2012)
  • Author(s): D. Imai, Y . Ishitani, X . Wang, K. Kusakabe, and A. Yoshikawa
  • Organizer: 10th International Symposium on Nitride Semiconductors
  • Place of Presentation: Washington, USA, oral
• [Presentation] Analysis of non-radiative carrier recombination processes in InN films by mid-infrared spectroscopy (2012)
  • Author(s): D. Imai, Y . Ishitani, M. Fujiwara, X. Wang, K. Kusakabe, and A. Y oshikawa
  • Organizer: Electronic Material Symposium
  • Place of Presentation: State College, P A, USA, oral
• [Presentation] InN のキャリア再結合における局所的電子 ・ 格子ダイナミクスの影響 (2012)
  • Author(s): 今井大地, 石谷善博, 王 新強, 草部一秀, 吉川明彦
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学
• [Presentation] Carrier scattering processes in p and n type InN fims by infrared spectroscopy (2012)
  • Author(s): M.Fujiwara, Y .Ishitani, X.Q.Wang, D.Imai, K.Kusakabe, and A.Y oshikawa
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学
• [Presentation] Characteristics of carrier recombination processes in n-type and p-type InN films analyzed by infrared spectroscopy (2012)
  • Author(s): D.Imai, Y .Ishitani, X.Q. Wang, K.Kusakabe, and A.Yoshikawa
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学
• [Presentation] 近・中赤外域分光による InN の輻射・非輻射再結合過程解析 (2012)
  • Author(s): 今井大地, 石谷善博, 王 新強, 草部一秀, 吉川明彦
  • Organizer: 第4回窒化物半導体結晶成長講演会
  • Place of Presentation: 東京大学生産技術研究所
• [Presentation] 窒化物エピタキシャル層評価における中赤外域表面・界面モードの利用 (2012)
  • Author(s): 増田祥太郎, 石谷善博, 草部一秀, 吉川明彦
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] InNの正孔散乱過程 (2011)
  • Author(s): 石谷善博，今井大地，王新強，草部一秀，吉川明彦
  • Organizer: 第5回窒化物半導体の高品質結晶成長とその素子応用
  • Place of Presentation: 東北大学金属材料研究所
• [Presentation] 赤外分光によるGaNのフォノン・電子物性深さ分解評価における重要点 (2011)
  • Author(s): 石谷善博，増田祥太郎，草部一秀，吉川明彦
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス
• [Presentation] 赤外分光法によるInNおよびその他窒化物半導体評価 (2011)
  • Author(s): 石谷善博，藤原昌幸，今井大地，王新強，草部一秀，吉川明彦
  • Organizer: 日本学術振興会第162委員会第76回研究会(招待講演)
  • Place of Presentation: キャンパスイノベーションセンター東京
• [Presentation] 窒化物半導体における光子－フォノン相互作用
  • Author(s): 八田佳祐
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Interface phonon polariton and infrared optical absorption in nitride thin films
  • Author(s): Yoshihiro Ishitani
  • Organizer: International Workshop on Nitride Semiconductors
  • Place of Presentation: 札幌コンベンションセンター
• [Presentation] InNのバンド端発光の低減におけるフォノン放出による非輻射性再結合過程
  • Author(s): 石谷善博
  • Organizer: 第22回格子欠陥フォーラム・励起ナノプロセス研究会・理研シンポジウム 合同シンポジウム
  • Place of Presentation: マホロバマインズ三浦
  • Invited
• [Presentation] Carrier scattering processes in p and n type InN fims by infrared spectroscopy
  • Author(s): M.Fujiwara, Y.Ishitani, X.Q.Wang, D.Imai, K.Kusakabe, and A.Yoshikawa
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学
• [Remarks] ホームページ
  • URL: http://photonics.te.chiba-u.jp
• [Remarks] 光エレクトロニクス研究室
  • URL: http://photonics.te.chiba-u.jp/index.html