Growth of RT multiferroic artificial superlattice using ALD
| Project/Area Number |
23656022
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Sophia University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
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| Keywords | 強磁性強誘電体 / エピタキシャル / 磁気材料 / 誘電体材料 / 超格子 / 原子層堆積法 / 人工超格子 / マルチフェロイックス / 強誘電体 / 強磁性体 |
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| Research Abstract |
The aim of the present study is to develop ferroelectric materials without lead which is harmful to environment. In particular, this study has been carried out with the aim of layer-by-layer growth of BiFeO3 using atomic layer deposition (ALD). One of the advantage of ALD is the ability of growth at low temperature.
At first, oxide films which include either Fe or Bi were fabricated. Using Bi(ph)3 and Fe(Cp)2 as Bi and Fe precursors which are easily decomposed at low tenperature, oxide films of Bi and Fe were successfully formed. In addition, the combination of Bi(ph)3 and Fe(Cp)2 results in the layer-by-layer growth of BiFeO3 using ALD.
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Report
(4 results)
Research Products
(7 results)
