| Project/Area Number |
23656024
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TSURUOKA Tohru 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA研究者 (20271992)
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| Co-Investigator(Renkei-kenkyūsha) |
SAUMYA R. Mohapatra 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, NIMS博士研究員
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 原子スイッチ / 高分子 / インクジェット印刷 / ナノイオニクス / フレキシブルデバイス |
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| Research Abstract |
Gapless-type atomic switches were fabricated on a plastic substrate using an inkjet printing of a solid polymer electrolyte (SPE). Using a high contrast in the surface energy between a metal electrode and the substrate, a thin SPE film could be deposited just over the electrode. The fabricated Ag/SPE/Pt cells showed bipolar resistive switching behavior under electrical bias in vacuum and atmosphere, which is attributed to the formation and dissolution of a metal filament between the electrodes. The cells also exhibited stable switching behavior under bending of the substrate. The obtained results demonstrate that the SPE-printed atomic switch has great potential for flexible switch/memory applications.
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