Electric field control memory operated at room temperature using multiferroic BiFeO3
| Project/Area Number |
23656025
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
MIYAZAKI Takamichi 東北大学, 工学部, 技術職員
ENDO Yasushi 東北大学, 大学院・工学研究科, 准教授 (50335379)
OKAMURA Soichiro 東京理科大学, 理学部応用物理学科, 教授 (60224060)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | マルチフェロイクス / 電気磁気効果 / ME 効果 / BiFeO_3 / 低消費電力 / BiFeO3 / 電界効果 / 磁化反転 / 低電圧 / CoFe2O4 / 電界制御 |
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| Research Abstract |
We prepared BiFeO_3/CoFe_2O_4 bilayer, and magnetic domain of CoFe_2O_4 was successfully reversed by an applying electric field to BiFeO_3 at room temperature. Our experimental plan was achieved 100%. Moreover, we could reduce the voltage by 1/20 using the vertical stacking structure, and small magnetic domain with 150 nm in diameter was successfully reversed in this project. This means that these research results are surpass to our expectation in first proposal
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Report
(3 results)
Research Products
(34 results)
