| Project/Area Number |
23656028
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
MATSUMOTO Yuji 東京工業大学, 応用セラミックス研究所, 准教授 (60302981)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 薄膜 / 金属ガラスSiC / SiC / フラックス成長 / 金属ガラス / エピタキシー |
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| Research Abstract |
In this project, first of all we developed a new laser microscope operated in vacuum, where a laser-heating system was first employed to attain extremely high temperatures up to 1600oC. This new laser microscope, combined with in situ SEM analyses, allowed us to investigate the thermal behavior of metallic glass on a SiC single crystal. Furthermore, in order to verify the potentiality of flux-vapor growth of SiC films, we demonstrated a successful improvement of the film quality in grain size and surface flatness of SiC by using Si-Ni flux. This is a promising result that encourages us to go further in the development of this growth technique for high-quality SiC single crystal films.
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