| Project/Area Number |
23656051
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
IKEDA Kazuhiro 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (70541738)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 光情報処理 / 光エレクトロニクス / 光制御 / スピンVCSEL / スピンフォトニクス / 半導体光デバイス |
|---|
| Research Abstract |
Our nonvolatile optical memory utilizes a vertical-cavity surface-emitting laser (VCSEL) grown on GaAs(110) substrate which has a long electron spin relaxation time. The readout is done by circularly polarized lasing with electrical spin injection. As the first step, we tried to demonstrate lasing under spin unpolarized current injection using a paramagnetic contact. However, it was found that the improvement of the VCSEL structure is necessary. An oxidized current confinement structure for reduction of threshold current, and a structure for current injection at a layer under the upper DBR with a lower crystal quality were investigated, and their fabrication processes have been established.
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