| Project/Area Number |
23656065
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied physics, general
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| Research Institution | Nagoya Institute of Technology (2012)
The Institute of Physical and Chemical Research (2011) |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
TAINO Tohru 埼玉大学, 理工学研究科, 准教授 (40359592)
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| Co-Investigator(Renkei-kenkyūsha) |
TERASHIMA Wataru 理化学研究所, テラヘルツ量子素子研究チーム, 研究員 (30450406)
OTANI Chiko 理化学研究所, テラヘルツイメージング研究チーム, チームリーダー (50281663)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | センサー / エピタキシャル成長 / 超伝導デバイス / テラヘルツ光技術 / 電波天文学 |
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| Research Abstract |
We fabricated epitaxial-grown Al film as superconductor materials by molecular beam epitaxy. These films were characterized by reflection high-energy electron diffraction (RHEED), atomic force microscope (AFM) and residual resistance ratio (RRR) measurement. The growth of Al was investigated on Al2O3 (0001) and Si (111) substrates, and flat surface with relatively high RRR of 15 was realized at substrate temperatures around 100 degrees Celsius. We also tried the deposition of epitaxial-grown MgO film as an insulator material and STJ fabrication. A streak RHEED pattern was successfully observed at the top surface of Al/MgO/Al junctions. The epitaxial-grown junctions showed good SIS characteristics in 0.3 K measurements.
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