In-situ observation of electrochemical deposited thin films by diffraction method
Project/Area Number |
23656080
|
Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
Allocation Type | Multi-year Fund |
Research Field |
Materials/Mechanics of materials
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Research Institution | Yokohama National University |
Principal Investigator |
AKINIWA Yoshiaki 横浜国立大学, 大学院・工学研究院, 教授 (00212431)
|
Co-Investigator(Renkei-kenkyūsha) |
SHOBU Takahisa 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究員 (90425562)
|
Project Period (FY) |
2011 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
|
Keywords | 薄膜 / 残留応力 / 結晶配向 / X線 / 電子線後方散乱 / 放射光 / 電着薄膜 / その場測定 |
Research Abstract |
The formation mechanism of the electrochemical deposited thin films was examined by observing the change of the crystalline orientation and residual stress during deposition by the X-ray method and the electron backscatter diffraction method. For the copper thin films deposited by both the direct current method and the pulse method, there were few changes of the crystalline orientation during deposition. On the other hand, the residual stress varied from tensile to compression. It was suggested that the formation mechanism of copper thin films was except the Volmer-Weber type.
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Report
(3 results)
Research Products
(13 results)